Semelab Plc IRF460 Datasheet
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
IRF460
N–CHANNEL
ENHANCEMENT MODE
HIGH V OL TA GE
POWER MOSFETS
Pin 1 – Gate Pin 2 – Source Case – Drain
ABSOLUTE MAXIMUM RATINGS (T
V
DSS
I
D
I
DM
V
GS
P
D
TJ, T
T
L
STG
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
STATIC ELECTRICAL RATINGS (T
case
= 25°C unless otherwise stated)
case
= 25°C
= 25°C unless otherwise stated)
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain – Source Breakdown Voltage
V
DSS
I
D(cont)
R
VGS= 0V , ID= 1mA
DS(on)
500V
21A
0.27
500
21
84
±20
300
2.4
–55 to 150
300
500
ΩΩ
V
A
A
V
W
W/°C
°C
V
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
Zero Gate Voltage Drain Current
(VGS= 0V)
Gate – Source Leakage Current
Gate Threshold V oltage
On State Drain Current
2
VDS= V
VDS= 0.8V
DSS
, TC= 125°C
DSS
VGS= ±20V , VDS= 0V
VDS= VGS, ID= 250µA
VDS> I
D(ON)
x R
DS(ON)
VGS= 10V
R
DS(ON)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.e-mail sales@semelab.co.uk
Drain – Source On State Resistance
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
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2
VGS= 10V , ID= 13A
VGS= 10V , ID= 21A
Max
25
µA
250
±100
24
21
nA
V
A
0.27
Ω
0.31
Prelim. 11/98
DYNAMIC CHARACTERISTICS
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS= 0V
VDS= 25V
f = 1MHz
VGS= 10V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
VGS= 15V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
RG= 1.8Ω
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic Test Conditions Min. Typ. Max. Unit
I
I
V
t
Q
S
SM
SD
rr
rr
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
1
2
Reverse Recovery Time
Reverse Recovery Charge
(Body Diode)
(Body Diode)
VGS= 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/µs
IS= – ID[Cont.] , dls / dt = 100A/µs
IRF460
2890
590
230
140 190
18 27
75 135
19 35
43 120
85 130
56 98
21
84
1.8
580
8.1
pF
nC
ns
A
V
ns
µC
THERMAL CHARACTERISTICS
Characteristic Min. Typ. Max. Unit
R
R
θJC
θJA
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
0.42
°C/W
30
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
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