Semelab Plc IRF450 Datasheet

IRF450

Prelim. 10/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 0 , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 0 , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

I

AR

Avalanche Current

2

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range

T

L

Lead Temperature 1.6mm (0.63”) from case for 10 sec.

±20V

12A

7.75A
48A

150W

1.2W/°C

8.0mJ
12A

3.5V/ns

-55 to +150°C
300°C

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• HERMETICALLY SEALED TO–3 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

TO–3 Metal Package

Pin 1 – Gate Pin 2 – Source Case – Drain

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) @ VDD= 25V , L ³480mH , RG= 25W, Peak IL= 28A , Starting TJ= 25°C

3) @ ISD£

28A , di/dt £170A/ms , VDD£

BV

DSS

, TJ£

150°C , Suggested RG= 9.1

W

V

DSS

500V

I

D(cont)

13A

R

DS(on)

0.4

WW

WW

39.95 (1.573)
max.

30.40 (1.197)

30.15 (1.187)

17.15 (0.675)

16.64 (0.655)

4.09 (0.161)

3.84 (0.151)
dia.

2 plcs.

1.78 (0.070)

1.52 (0.060)

1.09 (0.043)

0.97 (0.038)
dia.

2 plcs.

2

1

20.32 (0.800)

18.80 (0.740)
dia.

11.18 (0.440)

max.

26.67 (1.050)

10.67 (0.420)

12.07 (0.475)

11.30 (0.445)

7.87 (0.310)

6.99 (0.275)

IRF450

Prelim. 10/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

500

0.78

0.4

0.5

2 4

5.5
25

250
100

–100

2700

600
240

55 120

5 19

27 70

35

190
170
130

12
48

1.7

1600

14

Negligible

5.0
13

1.0

0.12
30

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 7.75A
VGS= 10V ID= 12A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 7.75A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V
ID= 12A
VDS= 0.5BV

DSS

VDD= 250V
ID= 12A
RG= 2.35

W

IS= 12A TJ= 25°C
VGS= 0
IF= 12A TJ= 25°C
di/ dt£

100A/ms VDD£

50V

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage

1

Reverse Recovery Time
Reverse Recovery Charge

1

Forward Turn–On Time

V

V/°C

W

V

S (É)

m

A

nA

pF

nC

ns

A

V

ns

m

C

nH

°C/W

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

R

q

JC

R

q

CS

R

q

JA

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms,

d £

2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(measured from 6mm down drain lead to centre of die)

Internal Source Inductance (from 6mm down source lead to source bond pad)

Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS