Semelab Plc IRF430 Datasheet

IRF430

Prelim. 6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 0 , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 0 , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

I

AR

Avalanche Current

2

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range

T

L

Lead Temperature 1.6mm (0.63”) from case for 10 sec.

±20V

4.5A
3A

18A

75W

0.6W/°C

1.1mJ

4.5A

3.5V/ns

-55 to +150°C
300°C

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• HERMETICALLY SEALED TO–3 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

TO–3 Metal Package

Pin 1 – Gate Pin 2 – Source Case – Drain

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) @ V

DD

= 50V , L ³100mH , RG= 25W, Peak IL= 4.5A , Starting TJ= 25°C

3) @ ISD£

4.5A , di/dt £75A/ms , VDD£

BV

DSS

, TJ£

150°C , Suggested RG= 7.5

W

V

DSS

500V

I

D(cont)

4.5A

R

DS(on)

1.5

WW

WW

40.01 (1.575)
Max.

22.23 (0.875)
Max.

1.09 (0.043)

0.97 (0.038)
Dia.

30.40 (1.197)

29.90 (1.177)

11.18 (0.440)

10.67 (0.420)

2

1

1.63 (0.064)

1.52 (0.060)

26.67

(1.050)

Max.

4.47 (0.176)
Rad.

2 Pls.

11.43 (0.450)

6.35 (0.250)

12.19 (0.48)

11.18 (0.44)

4.09 (0.161)

3.84 (0.151)
2 Pls

16.97 (0.668)

16.87 (0.664)

IRF430

Prelim. 6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

500

0.78

1.5

1.8

24

2.7
25

250
100

–100

610
135

65

16 40

26
820

30
40
80
30

4.5
18

1.4

900

7

Negligible

5.0
13

1.67

0.12
30

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 3A
VGS= 10V ID= 4.5A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 3A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V
ID= 4.5A
VDS= 0.5BV

DSS

VDD= 250V
ID= 4.5A
R

G

= 7.5

W

IS= 4.5A TJ= 25°C
VGS= 0
IF= 4.5A TJ= 25°C
di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage

1

Reverse Recovery Time
Reverse Recovery Charge

1

Forward Turn–On Time

V

V/°C

W

V

S (É)

m

A

nA

pF

nC

ns

A

V

ns

m

C

nH

°C/W

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

R

q

JC

R

q

CS

R

q

JA

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(measured from 6mm down drain lead to centre of die)

Internal Source Inductance (from 6mm down source lead to source bond pad)

Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS