Semelab Plc IRF240 Datasheet

IRF240

Prelim. 6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

MECHANICAL DATA

Dimensions in mm (inches)

TO3 METAL PACKAGE

N–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

FEATURES

• HERMETICALLY SEALED TO3 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

Pin 1 = Source Pin 2 Gate

V

DSS

200V

I

D(cont)

18A

R

DS(on)

0.18

WW

WW

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current @ T

case

= 25°C

I

D

Continuous Drain Current @ T

case

= 100°C

I

DM

Pulsed Drain Current

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

T

J

, T

stg

Operating and Storage Temperature Range

R

q

JC

Thermal Resistance Junction to Case

R

q

JA

Thermal Resistance Junction to Ambient

±20V

18A
11A
72A

125W

1.0W/°C

–55 to 150°C

1.0°C/W max.
30°C/W max.

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

11.18 (0.440)

10.67 (0.420)

1.09 (0.043)

0.97 (0.038)
Dia.

40.01 (1.575)
Max.

22.23 (0.875)
Max.

30.40 (1.197)

29.90 (1.177)

2

1

16.97 (0.668)

16.87 (0.664)

(1.050)

4.47 (0.176)

1.63 (0.064)

1.52 (0.060)

4.09 (0.161)

3.84 (0.151)

26.67

Max.

Rad.

2 Pls.

11.43 (0.450)

6.35 (0.250)

12.19 (0.48)

11.18 (0.44)

2 Pls

IRF240

Prelim. 6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 11A
VGS= 10V ID= 18A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 11A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V ID= 18A
VDS= 0.5BV

DSS

ID= 18A
VDS= 0.5BV

DSS

VDD= 100V
ID= 18A
RG= 9.1

W

IS= 18A TJ= 25°C
VGS= 0
IS= 18A TJ= 25°C
di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge
Gate – Source Charge

Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge

200

0.29

0.18

0.21

24

6.1
25

250
100

-100

1300

400
130

32 60

2.2 10.6

14 38

20

152

58
67

18
72

1.5

500

5.3

5.0
13

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

L

D

L

S

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from 6mm down drain lead pad to centre of die)

Internal Source Inductance (from 6mm down source lead to centre of source bond pad)

PACKAGE CHARACTERISTICS

(W)