Semelab Plc BUL52B, BUL52B Datasheet
BUL52B
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
Designed for use in
electronic ballast applications
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
800V
400V
10V
8A
12A
4A
100W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
123
15.1
10.2
6.3
4.5
1.3
3.6 Dia.
1.3
18.0
14.0
0.85
2.54
0.5
2.54
Pin 1 – Base
TO220
Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
BUL52B
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
Parameter Test Conditions Min. Typ. Max. Unit
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
f
t
C
ob
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
Output Capacitance
400
800
10
10
100
100
10
100
20 30
15 25 45
10 15
5
0.05 0.1
0.1 0.2
0.15 0.3
0.3 0.5
0.8 1.0
0.9 1.1
0.95 1.2
20
40
V
µA
µA
µA
—
V
V
MHz
pF
IC= 10mA
IC= 1mA
IE= 1mA
VCB= 800V
TC = 125°C
IB= 0 VCE= 400V
VEB= 9V
IC= 0 TC = 125°C
IC= 100mA VCE= 5V
IC= 1A VCE= 5V
IC= 3A VCE= 1V
TC = 125°C
IC= 100mA IB= 20mA
IC= 1A IB= 0.2A
IC= 2A IB= 0.4A
IC= 3A IB= 0.6A
IC= 1A IB= 0.2A
IC= 2A IB= 0.4A
IC= 3A IB= 0.6A
IC= 0.2A VCE= 4V
VCB= 20V f = 1MHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp= 300µs , δ < 2%
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
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