Semelab ZTX753DCSM Datasheet

ZTX753DCSM

Prelim. 7/00

Issue 3

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

PNP DU AL TRANSIST OR IN A

HERMETICALLY SEALED CERAMIC

SURF A CE MOUNT PA CKA GE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• DUAL SILICON PLANAR PNP
TRANSISTORS

• HERMETIC SURFACE MOUNT PACKAGE

• CECC SCREENING OPTIONS

• SPACE QUALITY LEVEL OPTIONS

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

I

CM

Peak Pulse Current

I

C

Continuous Collector Current

P

TOT

Power Dissipation @ T

amb

= 25°C

Derate above 25°C

T

jTSTG

Operating And Storage Temperature Range

R

q

J-A

Junction - Ambient Thermal Resistance

-120V

-100V

-5V

-6A

-2A
1W

8mW/°C

–55 to 150°C

125°C/W

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS PER SIDE (T

C

= 25°C unless otherwise stated)

LCC2 PACKAGE

Underside View

PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2

PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1

1.65 ± 0.13

(0.065 ± 0.005)

3

4

56

2.54 ± 0.13
(0.10 ± 0.005)

(0.09 ± 0.008)

A

2.29 ± 0.20

2

1

6.22 ± 0.13

(0.245 ± 0.005)

1.40 ± 0.15

(0.055 ± 0.006)

0.64 ± 0.08
(0.025 ± 0.003)

0.23

rad.

(0.009)

1.27 ± 0.13

A =

(0.05 ± 0.005)

4.32 ± 0.13
(0.170 ± 0.005)

ZTX753DCSM

Prelim. 7/00

Issue 3

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

Parameter Test Conditions Min. Typ. Max. Unit

IC= 100mA
IC= 10mA

IE= -100mA
VCB= -100V

T = 100°C
VEB= -4V
IC= -500mA IB= -50mA*

IC= -1A IB= -100mA*

IC= -2A IB= -200mA*
IC= -1A IB= -100mA*
IC= -1A VCE= -2V*
IC= -50mA VCE= -2V*
IC= -500mA VCE= 2V*
IC= -1A VCE= -2V*
IC= -2A VCE= -2V*

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

V

(BR)CBO

Collector – Base Breakdown Voltage

V

(BR)CEO

Collector – Emitter Breakdown Voltage

V

(BR)EBO

Emitter – Base Breakdown Voltage

I

CBO

Collector – Cut-off Current

I

EBO

Emitter Cut-off Current

V

CE(sat)

Collector – Emitter Saturation Voltage

V

BE(sat)

Base – Emitter Saturation Voltage

V

BE(on)

Base – Emitter Turn-On Voltage

H

FE

DC Current Gain

-120

-100

-5

-0.1

-10

-0.1

-0.2 -0.3

-0.35 -0.5

-0.8 -1.0

-1.0 -1.3

-0.95 -1.2

70 200

100 200 300

55 110
25 55

V

m

A

V

—

f

T

Transition Frequency

C

obo

Output Capacitance

T

on

Switching Times

T

off

Switching Times

I

C

= -100mA VCE= -5V f = 100MHz

VCB= -10V f = 1.0MHz

IC= -500mA VCC= 10V

IB1=IB2=50mA

100 140

30

40

600

MHz

pF

ns

DYNAMIC CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

* Pulse test tp = 300ms ,

d £

2%