Semelab ZTX653DCSM Datasheet

ZTX653DCSM

Prelim. 1/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

NPN DU AL TRANSIST OR IN A

HERMETICALLY SEALED CERAMIC

SURF A CE MOUNT PA CKA GE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• DUAL SILICON PLANAR NPN
TRANSISTORS

• HERMETIC SURFACE MOUNT PACKAGE

• CECC SCREENING OPTIONS

• SPACE QUALITY LEVEL OPTIONS

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

I

C

Continuous Collector Current

P

TOT

Power Dissipation @ T

amb

= 25°C

T

jTSTG

Operating And Storage Temperature Range

120V
100V

5V
2A

1W

–55 to 150°C

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS PER SIDE (T

C

= 25°C unless otherwise stated)

LCC2 PACKAGE

Underside View

PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2

PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1

1.65 ± 0.13

(0.065 ± 0.005)

3

4

56

2.54 ± 0.13
(0.10 ± 0.005)

(0.09 ± 0.008)

A

2.29 ± 0.20

2

1

6.22 ± 0.13

(0.245 ± 0.005)

1.40 ± 0.15

(0.055 ± 0.006)

0.64 ± 0.08
(0.025 ± 0.003)

0.23

rad.

(0.009)

1.27 ± 0.13

A =

(0.05 ± 0.005)

4.32 ± 0.13
(0.170 ± 0.005)

ZTX653DCSM

Prelim. 1/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

Parameter Test Conditions Min. Typ. Max. Unit

IC= 100µA

IC= 10mA

IE= 100µA
VCB= 100V

TC= 100°C
VEB= 4V
IC= 1A IB= 100mA*
IC= 2A IB= 200mA*
IC= 1A IB= 100mA*
IC= 1A VCE= 2V*
IC= 50mA VCE= 2V*
IC= 500mA VCE= 2V*
IC= 1A VCE= 2V*
IC= 2A VCE= 2V*

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

V

(BR)CBO

Collector – Base Breakdown Voltage

V

(BR)CEO

Collector – Emitter Breakdown Voltage

V

(BR)EBO

Emitter – Base Breakdown Voltage

I

CBO

Collector – Cut-off Current

I

EBO

Emitter Cut-off Current

V

CE(sat)

Collector – Emitter Saturation Voltage

V

BE(sat)

Base – Emitter Saturation Voltage

V

BE(on)

Base – Emitter Turn-On Voltage

H

FE

DC Current Gain

120
100

5

0.1
10

0.1

0.13 0.3

0.23 0.5

0.9 1.25

0.8 1.0

70 200

100 200 300

55 110
25 55

V
V
V

µA
µA

V
V

V

—

f

T

Transition Frequency

C

obo

Output Capacitance

T

on

Switching Times

T

off

Switching Times

I

C

= 100mA VCE= 5V f = 100MHz

VCB= 10V f = 1.0MHz

IC= 500mA VCC= 10V

IB1=IB2=50mA

140 175

30

80

1200

MHz

pF

ns

DYNAMIC CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

* Pulse test tp = 300ms , δ ≤ 2%