Semelab ZT91 Datasheet

Prelim.3/00

ZT91

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

MEDIUM PO WER SILICON

NPN PLANAR TRANSISTOR

General purpose NPN Transistor
in a hermetic TO39 package.

V

CEO

= 100V
IC= 1A
PT= 5W

120V
100V

6V

100V

1A

1W

2.9W
5W

175°C

–65 to 175°C

MECHANICAL DATA

Dimensions in mm (inches)

TO39 PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

Pin 1 = Emitter

Underside View

Pin 2 = Base Pin 3 = Collector

0.89

(0.035)

max.

12.70

(0.500)

min.

6.10 (0.240)

6.60 (0.260)

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

7.75 (0.305)

8.51 (0.335)
dia.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

5.08 (0.200)
ty p .

45°

 !

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

V

CER

Collector – Emitter Sustaining Voltage

I

C

Collector Current

P

TOT

Dissipation @ Tamb = 25°C

@ Case Temp. = 100°C
@ Case Temp. = 25°C
Derating linearly

T

stg,Tj

Storage and Operatuing Junction Temperature

100

1.2

1.5
1

60

0.1

30
40 120

60 250

6

25

100

Parameter Test Conditions Min. Typ. Max. Unit

Prelim.3/00

ZT91

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

I

C

= 10mA IB= 0
IC= 200mA IB= 20mA
IC= 200mA IB= 20mA
VCB=V

CE

IE= 0
T

amb

= 100°C
VEB= 5V IC= 0
VCE= 10V IC= 10mA
VCE= 10V IC= 200mA
VCE= 10V IC= 50mA

f = 10MHz

VCE= 10V IC= 300mA

f = 1KHz
VCB= 10V f = 0
VEB= 1V f = 0

V

CEO(SUS)

Collector – Emitter Sustaining Voltage

V

CE(sat)

Collector – Emitter Saturation Voltage

V

BE(sat)

Base – Emitter Saturation Voltage

I

CBO

Collector Cut-off Current

I

EBO

Emitter - Base Reverse Current

h

FE

DC Current Gain

fT Gain Bandwidth Product

NF Noise Figure
C

ob

Output Capacitance

C

ib

Input Capacitance

V

V

—

MHz

dB

pF