Semelab VP1008CSM4 Datasheet

VP1008CSM4

Prelim. 9/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

DS

Drain – Source Voltage

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current @TA= 25°C

@T

A

= 100°C

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @TA= 25°C

@T

A

= 100°C

T

STG

, T

J

Maximum Junction and Storage Temperature Range

100V

"30V
300mA
195mA

3A
400W
160W

150°C

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

ENHANCEMENT MODE

MOSFET

LCC3 PACKAGE

Underside View

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise stated)

NOTE:

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

PAD 1 - Drain
PAD 2 - N/C

PAD 3 - Source
PAD 4 - Gate

The VP1008CSM4 is a general purpose
P-Channel enhancement mode mosfet in
a Ceramic Surface Mount package
designed for high rel applications:

FEATURES

• B

VDSS

=100V

• I

D

= 300mA

• Hermetic Surface Mount Package

• Screening Option Available

5.59 ± 0.13

(0.22 ± 0.005)

23

0.64 ± 0.08
(0.025 ± 0.003)

3.81 ± 0.13
(0.15 ± 0.005)

4

1

0.23

(0.009)

1.27 ± 0.05
(0.05 ± 0.002)

0.25 ± 0.03

(0.01 ± 0.001)

rad.

1.40 ± 0.15

(0.055 ± 0.006)

0.23

(0.009)

min.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

VP1008CSM4

Prelim. 9/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Characteristic Test Conditions Min. Typ. Max. Unit

BV

DSS

V

GS(TH)

I

GSS

I

DSS

I

D(ON)

R

DS(ON)

g

fs

g

os

C

iss

C

oss

C

rss

t

on

t

off

-110 -100

-34 -2 -45

"100
"500

-10

-500

-2 -11
25 5
43 8

325 200
450

38 60
16 25

25

710
910

Drain – Source Breakdown Voltage
Gate Threshold Voltage

Gate – Source Leakage Current

Zero Gate Voltage Drain Current
On State Drain Current

1

Static Drain – Source
On-State Resistance

1

Forward Transconductance

1

Common Source Output Conductance

Input capacitance
Output capacitance
Reverse transfer capacitance

Turn–on Time
Turn-off Time

VGS= 0V ID= -10mA
VDS= V

GS

ID= -1mA

VGS= "20V VGS= 0V

TJ= 125°C

VDS= -100V VGS= 0V

TJ= 125°C
VDS= -15V VGS= -10V
VGS= 10V ID= -1A

TJ= 125°C
VDS= -10V ID= -0.5A
VDS= -7.5V ID= -0.1A

VGS= 0V
VDS= 25V
f = 1MHz

VDD= 15V RL= 23

W

ID= 0.6A RG= 25

W

V

GEN

= 10V

V

nA

m

A

A

W

mS

m

S

pF

ns

ELECTRICAL RATINGS (T

A

= 25°C unless otherwise stated)

NOTES:

1) Pulse Test: Pulse Width = 300ms , Duty Cycle £2%

Characteristic Min. Typ. Max. Unit

312.5R

q

JA

Junction – Ambient °C/W

THERMAL CHARACTERISTICS

STATIC CHARACTERISTICS

DYNAMIC CHARACTERISTICS

SWITCHING CHARACTERISTICS