SEME LAB SMP1000G-KQ Technical data

1
3
2
Ø 15.25
Ø 14.0
Ø 0.45
LEAD
10.16
20 nom. 5.5
Prelim. 1/98
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
DESCRIPTION
The SMP1000G-KQ is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The package window has greater ultra-violet light transmission, thus extending the useful spectral range of the device. The electrical terminations are via two leads of diameter 0.018" on pitch centre diameter of 0.2". The photodiode is electrically isolated from the package, which has a separate earth lead.
The larger photodiode active area provides greater sensitivity than the SMP900 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications across the infra-red to ultra-violet spectrum. Inclusion of a suitable optical
filter into the package can produce a device that responds only to ultra-violet light. The metal can, isolated photodiode and optional
screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference.
TO-8
Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
FEATURES
HIGH SENSITIVITY
WIDEST SPECTRAL RESPONSE
ENHANCED UV SENSITIVITY
PHOTODIODE ISOLATED FROM PACKAGE
EXCELLENT LINEARITY
LOW NOISE
INTEGRAL OPTICAL FILTER OPTION note 1
TO8 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
Note 1 Contact Semelab Plc for filter options
Pin 1 – Anode Pin 2 – Cathode Pin 3 – Case
查询SMP1000G-KQ供应商
Directional Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 10 20 30 40 50 60 70 80 90
Angle from sensor to illumination
Normalised incident power
Prelim. 1/98
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Characteristic Test Conditions. Min. Typ. Max. Units
Responsively Active Area
Dark Current
Breakdown Voltage
Capacitance
Rise Time
NEP
λ at 900nm
E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse E = 0 Dark 20V Reverse 30V Reverse 50 900nm
0.45 0.55
76.85 8 9
16 38
60 80
800 735 150
16
28x10
-14
0.45
A/W mm
2
nA
V
pF
ns
W/Hz
CHARACTERISTICS(T
amb
=25°C unless otherwise stated)
Directional characteristics
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1
Normalised incident power
10°
20°
30°
40°
50°
60°
70°
80°
Angle from sensor to illumination
Spectral Response
0
20
40
60
80
100
0 200 400 600 800 1000 1200
Wavelength (nm)
Relative Responsivity (%)
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