SEME LAB SMP1000G-KP Technical data

SMP1000G-KP

Prelim. 1/98

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

MECHANICAL DATA

Dimensions in mm.

P.I.N. PHOTODIODE

DESCRIPTION

The SMP1000G-KP is a large Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
electrical terminations are via two leads of diameter 0.018"
on a pitch centre diameter of 0.2". The photodiode is
electrically isolated from the package, which has a
separate earth lead.

The larger photodiode active area provides greater
sensitivity than the SMP900 range of devices, with a
corresponding reduction in speed. The photodiode
structure has been optimised for high sensitivity, light
measurement applications. The metal can, isolated
photodiode and optional screening mesh ensure a rugged
device with a high degree of immunity to conducted and
radiated electrical interference.

Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage

-40°C to +70°C

-45°C to +80°C

0.35% per °C

x2 per 8°C rise

60V

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• HIGH SENSITIVITY

• PHOTODIODE ISOLATED FROM PACKAGE

• EXCELLENT LINEARITY

• LOW NOISE

• WIDE SPECTRAL RESPONSE

• INTEGRAL OPTICAL FILTER OPTION note 1

• TO8 HERMETIC METAL CAN PACKAGE

• EMI SCREENING MESH AVAILABLE

Note 1 Contact Semelab Plc for filter options

1

3

2

Ø 15.25

Ø 14.0

Ø 0.45

LEAD

10.16

20 nom. 5.5

TO-8

Pin 1 – Anode Pin 2 – Cathode Pin 3 – Case

查询SMP1000G-KP供应商

SMP1000G-KP

Prelim. 1/98

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Characteristic Test Conditions. Min. Typ. Max. Units

Responsively
Active Area

Dark Current

Breakdown Voltage

Capacitance

Rise Time

NEP

λ at 900nm

E = 0 Dark 1V Reverse
E = 0 Dark 10V Reverse
E = 0 Dark 10µA Reverse
E = 0 Dark 0V Reverse
E = 0 Dark 20V Reverse
30V Reverse
50Ω
900nm

0.45 0.55

76.85
8 9

16 38

60 80

800 735
150

16

28x10

-14

0.45

A/W
mm

2

nA

V

pF

ns

W/√Hz

CHARACTERISTICS(T

amb

=25°C unless otherwise stated)

Directional Characteristics

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0 10 20 30 40 50 60 70 80 90

Angle from sensor to illumination

Directional characteristics

0

0.2

0.4

0.6

0.8

1

0 0.2 0.4 0.6 0.8 1

Normalised incident power

10°

20°

30°

40°

50°

60°

70°

80°

Angle from sensor
to illumination

Spectral Response

0

20

40

60

80

100

0 200 400 600 800 1000 1200

Wavelength (nm)

Relative Responsivity (%)

Normalised Incident Power