SEME LAB SMP1000G-JQ Technical data

1

2

Ø 15.25

Ø 14.0

Ø 0.45

LEAD

10.16

20 nom. 5.5

SMP1000G-JQ

Prelim. 1/98

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

MECHANICAL DATA

Dimensions in mm.

P.I.N. PHOTODIODE

DESCRIPTION

The SMP1000G-JQ is a large Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
package window has greater ultra-violet light transmission,
thus extending the useful spectral range of the device. The
electrical terminations are via two leads of diameter 0.018"
on pitch of 0.2". The cathode of the photodiode is
electrically connected to the package.

The larger photodiode active area provides greater
sensitivity than the SMP900 range of devices, with a
corresponding reduction in speed. The photodiode
structure has been optimised for high sensitivity, light
measurement applications across the infra-red to ultra­violet spectrum. Inclusion of a suitable optical filter into the
package can produce a device that responds only to ultra­violet light. The metal can and optional screening mesh
ensure a rugged device with a high degree of immunity to
radiated electrical interference.

Standard TO-8

Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage

-40°C to +70°C

-45°C to +80°C

0.35% per °C

x2 per 8°C rise

60V

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• HIGH SENSITIVITY

• EXCELLENT LINEARITY

• LOW NOISE

• WIDEST SPECTRAL RESPONSE

• ENHANCED UV SENSITIVITY

• INTEGRAL OPTICAL FILTER OPTION note 1

• TO8 HERMETIC METAL CAN PACKAGE

• EMI SCREENING MESH AVAILABLE

Note 1 Contact Semelab Plc for filter options

Pin 1 – Anode Pin 2 – Cathode & Case

查询SMP1000G-JQ供应商

SMP1000G-JQ

Prelim. 1/98

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Characteristic Test Conditions. Min. Typ. Max. Units

Responsively
Active Area

Dark Current

Breakdown Voltage

Capacitance

Rise Time

NEP

λ at 900nm

E = 0 Dark 1V Reverse
E = 0 Dark 10V Reverse
E = 0 Dark 10µA Reverse
E = 0 Dark 0V Reverse
E = 0 Dark 20V Reverse
30V Reverse
50Ω
900nm

0.45 0.55

76.85
8 9

16 38

60 80

800 735
150

16

28x10

-14

0.45

A/W
mm

2

nA

V

pF

ns

W/√Hz

CHARACTERISTICS(T

amb

=25°C unless otherwise stated)

Directional Characteristics

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0 10 20 30 40 50 60 70 80 90

Angle from sensor to illumination

Directional characteristics

0

0.2

0.4

0.6

0.8

1

0 0.2 0.4 0.6 0.8 1

Normalised incident power

10°

20°

30°

40°

50°

60°

70°

80°

Angle from sensor
to illumination

Spectral Response

0

20

40

60

80

100

0 200 400 600 800 1000 1200

Wavelength (nm)

Relative Responsivity (%)

Normalised Incident Power