SMP1000G-JP
Prelim. 1/98
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
DESCRIPTION
The SMP1000G-JP is a large Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
electrical terminations are via two leads of diameter 0.018"
on a pitch of 0.2". The cathode of the photodiode is
electrically connected to the package.
The large photodiode active area provides greater
sensitivity than the SMP900 range of devices, with a
corresponding reduction in speed. The photodiode
structure has been optimised for high sensitivity, light
measurement applications. The metal can and optional
screening mesh ensure a rugged device with a high
degree of immunity to radiated electrical interference.
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
FEATURES
• HIGH SENSITIVITY
• EXCELLENT LINEARITY
• LOW NOISE
• WIDE SPECTRAL RESPONSE
• INTEGRAL OPTICAL FILTER OPTION note 1
• TO8 HERMETIC METAL CAN PACKAGE
• EMI SCREENING MESH AVAILABLE
Note 1 Contact Semelab Plc for filter options
1
2
Ø 15.25
Ø 14.0
Ø 0.45
LEAD
10.16
20 nom. 5.5
Standard TO-8
Pin 1 – Anode Pin 2 – Cathode & Case
查询SMP1000G-JP供应商
SMP1000G-JP
Prelim. 1/98
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Characteristic Test Conditions. Min. Typ. Max. Units
Responsively
Active Area
Dark Current
Breakdown Voltage
Capacitance
Rise Time
NEP
λ at 900nm
E = 0 Dark 1V Reverse
E = 0 Dark 10V Reverse
E = 0 Dark 10µA Reverse
E = 0 Dark 0V Reverse
E = 0 Dark 20V Reverse
30V Reverse
50Ω
900nm
0.45 0.55
76.85
8 9
16 38
60 80
800 735
150
16
28x10
-14
A/W
mm
2
nA
V
pF
ns
W/√Hz
CHARACTERISTICS(T
amb
=25°C unless otherwise stated)
Directional Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 10 20 30 40 50 60 70 80 90
Angle from sensor to illumination
Directional characteristics
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1
Normalised incident power
10°
20°
30°
40°
50°
60°
70°
80°
Angle from sensor
to illumination
Spectral Response
0
20
40
60
80
100
0 200 400 600 800 1000 1200
Wavelength (nm)
Relative Responsivity (%)
Normalised Incident Power