SEME LAB D2010UK Technical data

D2010UK

Prelim.12/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

I

D(sat)

Drain Current

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

83W

65V

±20V

8A

–65 to 150°C

200°C

MECHANICAL DATA

G

K

M

J

I

E

D

(2 pls)

C

N

(typ)

A

B

F

(2 pls)

H

1

2

3

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

20W – 28V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOWC

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

•HIGHGAIN–10dBMINIMUM

DP

PIN 1 SOURCE PIN 2 DRAIN
PIN 3 GATE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from 50 MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

DIM mm Tol. Inches Tol.

A 16.51 0.25 0.650 0.010
B 6.35 0.13 0.250 0.005
C 45° 5° 45° 5°
D 3.30 0.13 0.130 0.005
E 18.92 0.08 0.745 0.003
F 1.52 0.13 0.060 0.005
G 2.16 0.13 0.085 0.005
H 14.22 0.08 0.560 0.003

I 1.52 0.13 0.060 0.005

J 6.35 0.13 0.250 0.005
K 0.13 0.03 0.005 0.001
M 5.08 0.51 0.200 0.020
N 1.27 x 45° 0.13 0.050 x 45° 0.005

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D2010UK

Prelim.12/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS=0 ID= 10mA

VDS= 28V VGS=0
VGS= 20V VDS=0

ID= 10mA VDS=V

GS

VDS= 10V ID= 1.6A
PO= 20W
VDS= 28V IDQ= 0.8A

f = 1GHz
VDS=0 VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz

V

mA

µA

V
S

dB

%

—
pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage*

g

fs

Forward Transconductance*

G

PS

Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
C

iss

Input Capacitance
C

oss

Output Capacitance
C

rss

Reverse Transfer Capacitance

65

8
1

17

1.44
10
40

20:1

96
48

4

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

R

THj–case

Thermal Resistance Junction – Case Max. 2.1°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%