Seme FMMT42CSM Datasheet

FMMT42CSM

MECHANICAL DATA

Dimensions in mm (inches)

0.51 ± 0.10

(0.02 ± 0.004)

3

2.54 ± 0.13
(0.10 ± 0.005)

21

1.91 ± 0.10

(0.075 ± 0.004)

3.05 ± 0.13

(0.12 ± 0.005)

A =

SOT23 CERAMIC

(LCC1 PACKAGE)

UndersideView

PAD 1 – Base

PAD 2 – Emitter PAD 3 – Collector

0.31

rad.

(0.012)

0.76 ± 0.15
(0.03 ± 0.006)

0.31

rad.

(0.012)

1.02 ± 0.10

(0.04 ± 0.004)

1.40

(0.055)

max.

GENERAL PURPOSE

NPN TRANSISTOR

IN A HERMETICALLY SEALED

CERAMIC SURFACE MOUNT

PACKAGE

FEATURES

• GENERAL PURPOSE NPN TRANSISTOR

A

• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE

• CECC SCREENING OPTIONS

ABSOLUTE MAXIMUM RATINGS (T

V
V
V
I

C

P

T

jTstg

CBO
CEO
EBO

tot

Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Power Dissipation @ T

@ T

amb

case

Operating and Storage Temperature

= 25°C unlessotherwise stated)

case

= 25°C
= 25°C

300V
300V

6V

500mA

680mW

1.8W

–55 to 175°C

THERMAL CHARACTERISTICS

Parameter Max. Unit

th(j-amb)Thermal Resistance Junction to Ambient 350 °C/W

R

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FMMT42CSM

ELECTRICAL CHARACTERISTICS (T

Parameter Test Conditions Min. Typ. Max.Unit

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

Collector – Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current

Emitter Cut-off Current
Collector – Emitter Saturation Voltage

Emitter Saturation Voltage

Static Forward Current Transfer Ratio

Transition Frequency

Output Capacitance

= 25°C unless otherwise stated)

C

IC= 100µAIE= 0
IC= 1mA IB= 0*
IE= 100µAIC= 0
VCB= 200V IE= 0
VEB= 6V IC= 0
VEB= 4V IC= 0
IC= 20mA IB= 2mA
IC= 20mA IB= 2mA
IC= 1mA VCE= 10V*
IC= 10mA VCE= 10V*
IC= 30mA VCE= 10V*
VCE= 20V IC= 10mA
f = 20MHz
VCB= 20V IE= 0
f = 1MHz

300
300

6

25
40
40

50

V
V
V

0.1

0.1

µA
µA

—

0.5
V

0.9

—

MHz

6

pF

* Pulse Test: Pulse Width = 200µs, Duty Cycle ≤2%.

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E-mail: [e-mail]

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