Seme D2293UK Datasheet

D2293UK

Prelim. 7/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website http://www.semelab.co.uk

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

I

D(sat)

Drain Current *

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

42W

40V

±20V

8A

–65 to 150°C

200°C

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 12.5V – 500MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 11 dB MINIMUM

SOT 171

PIN 1 SOURCE
PIN 3 GATE
PIN 5 SOURCE

PIN 2 SOURCE
PIN 4 DRAIN
PIN 6 SOURCE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

Parameter Test Conditions Min. Typ. Max. Unit

D2293UK

Prelim. 7/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website http://www.semelab.co.uk

40

1
6

17

0.72
11
50

20:1

48
40

4

VGS= 0 ID= 10mA

VDS= 12.5V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 0.6A
PO= 10W
VDS= 12.5V IDQ= 0.4A

f = 500MHz
VDS= 0 VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz

V

mA

m

A
V
S

dB

%

—
pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage *

g

fs

Forward Transconductance *

G

PS

Common Source Power Gain

h

Drain Efficiency
VSWR Load Mismatch Tolerance
C

iss

Input Capacitance
C

oss

Output Capacitance
C

rss

Reverse Transfer Capacitance

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

R

THj–case

Thermal Resistance Junction – Case Max.4.2°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%