Seme D2282UK Datasheet
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/96
D2282UK
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
2W
40V
±20V
400mA
–65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm.
6.7
6.3
3.1
2.9
3.7
3.3
7.3
6.7
4.60
2.30
1.05
0.85
0.80
0.60
123
4
13˚
0.10
0.02
0.32
0.24
16˚
max
.
1.70
max
.
10˚
max
.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 6V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
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• SIMPLE BIAS CIRCUITS
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 8dB MINIMUM
• SURFACE MOUNT
SOT–223
PIN 1 GATE PIN 2 DRAIN
PIN 3 SOURCE PIN 4 DRAIN
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
METAL GATE RF SILICON FET
TetraFET
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/96
D2282UK
Parameter Test Conditions Min. Typ. Max. Unit
40
1
1
1 5
0.18
8
40
10:1
12
10
1
VGS= 0
ID= 10mA
VDS= 12.5V
VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 0.2A
PO= 750mW
VDS= 6V IDQ= 75mA
f = 1GHz
VDS= 0V VGS= –5V
f = 1MHz
VDS= 12.5V VGS= 0
f = 1MHz
VDS= 12.5V VGS= 0
f = 1MHz
V
mA
µA
V
mhos
dB
%
—
pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
THj–case
Thermal Resistance Junction – Case Max. 70°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
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