Seme D2229UK Datasheet

D2229UK

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website http://www.semelab.co.uk

Prelim. 2/99

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

I

D(sat)

Drain Current

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

17.5W
40V

±20V

2A

–65 to 150°C

200°C

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

2.5W – 12.5V – 1GHz
SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

METAL GATE RF SILICON FET

TetraFET

MECHANICAL DATA

Dimensions in mm.

1

2

3

4

3.00
2 PL.

2.07
2 PL.

2 PL.

0.47

0.47
2 PL.

0.10
TYP.

0.381

1.65
2 PL.

5.50 ± 0.15

1.27 ± 0.05
2 PL.

1.27

1.27

0.10 R.
TYP.

0.10
TYP.

6.50 ±

0.15

0.3 R.
4 PL.

1.27

0.80
4 PL.

8

7

6

5

4.90 ± 0.15

0.508

0.360
± 0.005

2.313
± 0.2

F-0127 PACKAGE

PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE

PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE

Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.

D2229UK

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website http://www.semelab.co.uk

Prelim. 2/99

Parameter Test Conditions Min. Typ. Max. Unit

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage*

g

fs

Forward Transconductance*

G

PS

Common Source Power Gain

h

Drain Efficiency
VSWR Load Mismatch Tolerance
C

iss

Input Capacitance
C

oss

Output Capacitance
C

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Reverse Transfer Capacitance

VGS= 0 ID= 10mA

VDS= 12.5V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 0.2A
PO= 2.5W
VDS= 12.5V IDQ= 0.1A

f = 1GHz
VDS= 0V VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz

V

mA

m

A
V
S

dB

%

—
pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

40

1
1

0.5 7

0.18
10
40

20:1

12
10

1

R

THj–case

Thermal Resistance Junction – Case Max. 10°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%