Seme D2225UK Datasheet
MECHANICAL DATA
A
TetraFET
D2225UK
METAL GATE RF SILICON FET
N
GOLD METALLISED
8
D
7
6
5
K
L
J
PIN 1 – SOURCE
PIN 2 – DRAIN 1
PIN 3 – DRAIN 2
PIN 4 – SOURCE
Dim.
1
2
3
4
H
E
FG
SO8 PACKAGE
PIN 5 – SOURCE
PIN 6 – GATE 2
PIN 7 – GATE 1
PIN 8 – SOURCE
mm Tol. Inches Tol.
A
4.06 ±0.08 0.160 ±0.003
B
5.08 ±0.08 0.200 ±0.003
C
1.27 ±0.08 0.050 ±0.003
D
0.51 ±0.08 0.020 ±0.003
E
3.56 ±0.08 0.140 ±0.003
F
4.06 ±0.08 0.160 ±0.003
G
1.65 ±0.08 0.065 ±0.003
H
0.76 0.030
0.51 Min. 0.020 Min.
J
1.02 Max. 0.040 Max.
45° Max. 45° Max.
K
0° Min. 0° Min.
L
7° Max. 7° Max.
0.20 ±0.08 0.008 ±0.003
M
2.18 Max. 0.086 Max.
N
4.57 ±0.08 0.180 ±0.003
P
+0.25 +0.010
-0.00 -0.000
MULTI-PURPOSE SILICON
BC
P
DMOS RF FET
5W – 12.5V – 1GHz
PUSH–PULL
FEATURES
M
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1GHz
rss
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
17.5W
40V
±20V
4A
–65 to 150°C
200°C
Prelim. 2/99
D2225UK
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= 0V VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
= 25°C unless otherwise stated)
case
PER SIDE
VGS= 0 ID= 10mA
VDS= 12.5V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 0.2A
GS
TOTAL DEVICE
PO= 5W
VDS= 12.5V IDQ= 0.2A
f = 1GHz
PER SIDE
40
0.5 7
0.18
10
40
20:1
1
1
12
10
1
V
mA
µA
V
S
dB
%
—
pF
pF
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 6°C / W
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 2/99
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