Seme D2221UK Datasheet
D2221UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
17.5W
40V
±20V
6A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
BC
A
E
FG
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
7.5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm Tol. Inches Tol.
4.06 ±0.08 0.160 ±0.003
5.08 ±0.08 0.200 ±0.003
1.27 ±0.08 0.050 ±0.003
0.51 ±0.08 0.020 ±0.003
3.56 ±0.08 0.140 ±0.003
4.06 ±0.08 0.160 ±0.003
1.65 ±0.08 0.065 ±0.003
+0.25 +0.010
0.76 0.030
-0.00 -0.000
0.51 Min. 0.020 Min.
1.02 Max. 0.040 Max.
45° Max. 45° Max.
0° Min. 0° Min.
7° Max. 7° Max.
0.20 ±0.08 0.008 ±0.003
2.18 Max. 0.086 Max.
4.57 ±0.08 0.180 ±0.003
METAL GATE RF SILICON FET
TetraFET
D2221UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
Parameter Test Conditions Min. Typ. Max. Unit
Drain–Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
VGS= 0 ID= 10mA
VDS= 12.5V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 0.6A
PO= 7.5W
VDS= 12.5V IDQ=0.3A
f = 1GHz
VDS= 0V VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
40
3
1
0.5 7
0.54
10
40
20:1
36
30
3
R
THj–case
Thermal Resistance Junction – Case Max. 6°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
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