Seme D2213UK Datasheet
LAB
SEME
D2213UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/96
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage *
BV
GSS
Gate – Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
83W
40V
±20V
8A
–65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(
2 pls
)
K
2
3
E
1
G (4 pls
)
5
4
D
N
M
JIH
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
DK
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
PIN 2 DRAIN 1
PIN 4 GATE 2
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
DIM mm Tol. Inches Tol.
A 6.45 0.13 0.254 0.005
B 1.65R 0.13 0.065R 0.005
C 45° 5° 45° 5°
D 16.51 0.76 0.650 0.03
E 6.47 0.13 0.255 0.005
F 18.41 0.13 0.725 0.005
G 1.52 0.13 0.060 0.005
H 4.82 0.25 0.190 0.010
I 24.76 0.13 0.975 0.005
J 1.52 0.13 0.060 0.005
K 0.81R 0.13 0.032R 0.005
M 0.13 0.02 0.005 0.001
N 2.16 0.13 0.085 0.005
* Per Side
Parameter Test Conditions Min. Typ. Max. Unit
LAB
SEME
D2213UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/96
40
4
4
0.5 7
0.72
10
40
20:1
48
40
4
VGS= 0 ID= 10mA
VDS= 12.5V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 0.8A
PO= 20W
VDS= 12.5V IDQ= 0.8A
f = 1GHz
VDS= 0 VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Drain–Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case Max. 2.1°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
TOTAL DEVICE
PER SIDE
PER SIDE
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