Seme D2211UK Datasheet

D2211UK

Prelim. 9/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

I

D(sat)

Drain Current

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

70W

40V

±20V

16A

–65 to 150°C

200°C

MECHANICAL DATA

A

F

E

B

D

C

G

H

I

P

M

N

O

J

K

L

1

2

3

4

5

6

7

8

Q

R

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 7.2V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

rss

• LOW NOISE

• HIGH GAIN

PIN 1 Source
PIN 2 Drain
PIN 3 Drain
PIN 4 Source

PIN 5 Source
PIN 6 Gate
PIN 7 Gate
PIN 8 Source

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

METAL GATE RF SILICON FET

TetraFET

DBC3 Package

DIM mm Tol. Inches Tol.

A 6.47 0.08 .255 .003
B 0.76 0.08 .030 .003

C 45° 5° 45° 5°

D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003

I 7.92 0.08 .312 .003

J 0.20 0.02 .008 .001
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
R 0.25 0.07 0.010 .003

D2211UK

Prelim. 9/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 10mA

VDS= 12.5V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 0.8A
PO= 10W
VDS= 7.2V IDQ= 0.8A

f = 1GHz
VDS= 0 VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz

V

mA

m

A
V
S

dB

%

—
pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage*

g

fs

Forward Transconductance*

G

PS

Common Source Power Gain

h

Drain Efficiency
VSWR Load Mismatch Tolerance
C

iss

Input Capacitance
C

oss

Output Capacitance
C

rss

Reverse Transfer Capacitance

40

8
8

17

1.44
7

40

20:1

96
80

8

R

THj–case

Thermal Resistance Junction – Case Max. 2.5°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%