Seme D2203UK Datasheet
MECHANICAL DATA
TetraFET
D2203UK
METAL GATE RF SILICON FET
GOLD METALLISED
D
A
NM K
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
DIM mm Tol. Inches Tol.
A 16.38 0.26 0.645 0.010
B 1.52 0.13 0.060 0.005
C 45° 5° 45° 5°
D 6.35 0.13 0.250 0.005
E 3.30 0.13 0.130 0.005
F 14.22 0.13 0.560 0.005
G 1.27 x 45° 0.13 0.05 x 45° 0.005
H 1.52 0.13 0.060 0.005
I 6.35 0.13 0.250 0.005
J 0.13 0.02 0.005 0.001
K 2.16 0.13 0.085 0.005
M 1.52 0.13 0.060 0.005
N 5.08 MAX 0.200 MAX
O 18.90 0.13 0.744 0.005
B
H
3
2
1
54
F
I
O
DQ
PIN 2 DRAIN 1
PIN 4 GATE 2
C
G
E
J
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 12.5V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 2 GHz
rss
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
35W
40V
±20V
4A
–65 to 150°C
200°C
Prelim. 9/95
D2203UK
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= 0 VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
= 25°C unless otherwise stated)
case
PER SIDE
VGS= 0 ID= 10mA
VDS= 12.5V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 0.2A
GS
TOTAL DEVICE
PO= 5W
VDS= 12.5V IDQ= 0.2A
f = 1GHz
PER SIDE
40
1
1
17
0.18
10
40
20:1
12
10
1
V
mA
µA
V
S
dB
%
—
pF
pF
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 5.0°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
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