Seme D2202UK Datasheet
D2202UK
Prelim. 12/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DIM Millimetres Tol. Inches Tol.
A 16.51 0.25 0.650 0.010
B 6.35 0.13 0.250 0.005
C 45° 5° 45° 5°
D 3.30 0.13 0.130 0.005
E 18.92 0.05 0.745 0.002
F 1.52 0.13 0.060 0.005
G 2.16 0.13 0.085 0.005
H 14.22 0.05 0.560 0.002
I 1.52 0.13 0.060 0.005
J 6.35 0.13 0.250 0.005
K 0.10 0.02 0.004 0.001
M 5.08 0.51 0.200 0.02
N 1.27 x 45° 0.13 0.050 x 45° 0.005
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
29W
40V
±20V
4A
–65 to 150°C
200°C
MECHANICAL DATA
G
K
M
J
I
E
D
(2 pls)
C
N
(typ)
A
B
F
(2 pls)
H
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOWC
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
•HIGHGAIN–10dBMINIMUM
DP
PIN 1 SOURCE PIN 2 DRAIN
PIN 3 GATE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
D2202UK
Prelim. 12/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
VGS=0 ID= 10mA
VDS= 12.5V VGS=0
VGS= 20V VDS=0
ID= 10mA VDS=V
GS
VDS= 10V ID= 0.2A
PO=5W
VDS= 12.5V IDQ= 0.2A
f = 1GHz
VDS=0V VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
V
mA
µA
V
mhos
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Drain–Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
40
2
1
17
0.36
10
40
20:1
24
20
2
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case Max. 6.0°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
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