Seme D2089UK Datasheet
MECHANICAL DATA
B
3
4
TetraFET
D2089UK
METAL GATE RF SILICON FET
GOLD METALLISED
H
MULTI-PURPOSE SILICON
DMOS RF FET
1W – 28V – 2GHz
1
SINGLE ENDED
G
(
2 pls
2
C
2 pls
(
)
A
PIN 1 SOURCE PIN 2 GATE
PIN 3 SOURCE PIN 4 DRAIN
DIM Millimetres Tol. Inches Tol.
A 25.40 0.25 1.00 0.010
B 45° 5° 45° 5°
C 0.76 0.05 0.030 0.002
D 5.21 DIA 0.13 0.205 0.005
E 1.02 0.13 0.040 0.005
F 0.13 0.02 0.005 0.001
G 3.18 0.13 0.125 0.005
H 3.18 REF 0.125 REF
D
)
F
E
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
4W
65V
±20V
1A
–65 to 150°C
200°C
Prelim. 5/96
D2089UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
P
out
C
iss
C
oss
C
rss
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage
Forward Transconductance*
Power Output
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 0 |D= 10mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 0.2A
VDS= 28V IDQ= 75mA
f = 30MHz Pin= 5mW
VDS= 0V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
GS
65
1
1
17
0.18
750
12
6
0.5
V
mA
µA
V
mhos
mW
pF
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 30°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Loading...