Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
D2085UK
Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain–Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage
g
m
*
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS(th)match
Gate Threshold Matching Voltage
Between Sides
I = 100mA
V = 28V
V = 20V
I = 10mA
V = 10V I = 4A
T = 300µS
VDS= 0V VGS= -5V
V = 28V
V = 28V
ID= 10mA
VDS= V
GS
V
mA
µA
V
mhos
pF
pF
pF
V
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
PO= 120W f = 800MHz V = 28V IDQ= 4A
Thermal Resistance = 0.52 °C / W
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
65
5
1
17
4
215
85
4.5
0.1
PER SIDE
TOTAL DEVICE
DIM mm Tol. Inches Tol.
A 19.05 0.50 0.75 0.020
B 10.77 0.13 0.424 0.005
C 45° 5° 45° 5°
D 9.78 0.13 0.385 0.005
E 5.71 0.13 0.225 0.005
F 27.94 0.13 1.100 0.005
G 1.52R 0.13 0.060R 0.005
H 10.16 0.13 0.400 0.005
I 22.22 MAX 0.875 MAX
J 0.13 0.02 0.005 0.001
K 2.72 0.13 0.107 0.005
M 1.70 0.13 0.067 0.005
N 5.08 0.50 0.200 0.020
O 34.03 0.13 1.340 0.005
P 1.57R 0.08 0.062R 0.003
MECHANICAL DATA
M
KJ
I
ON
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(ty p )
P
(2 pls)
1
5
4
32
H
TetraFET
120W – 28V – 0.8GHz
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
PIN 2 DRAIN 1
PIN 4 GATE 2