Seme D2085UK Datasheet

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Prelim. 5/96
D2085UK
Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain–Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage
g
m
*
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS(th)match
Gate Threshold Matching Voltage Between Sides
I = 100mA V = 28V V = 20V I = 10mA V = 10V I = 4A T = 300µS VDS= 0V VGS= -5V V = 28V V = 28V ID= 10mA VDS= V
GS
V
mA
µA
V
mhos
pF pF pF
V
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
PO= 120W f = 800MHz V = 28V IDQ= 4A Thermal Resistance = 0.52 °C / W
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
65
5 1
17
4
215
85
4.5
0.1
PER SIDE
TOTAL DEVICE
DIM mm Tol. Inches Tol.
A 19.05 0.50 0.75 0.020 B 10.77 0.13 0.424 0.005 C 45° 45° 5° D 9.78 0.13 0.385 0.005 E 5.71 0.13 0.225 0.005 F 27.94 0.13 1.100 0.005 G 1.52R 0.13 0.060R 0.005 H 10.16 0.13 0.400 0.005
I 22.22 MAX 0.875 MAX
J 0.13 0.02 0.005 0.001 K 2.72 0.13 0.107 0.005 M 1.70 0.13 0.067 0.005 N 5.08 0.50 0.200 0.020 O 34.03 0.13 1.340 0.005 P 1.57R 0.08 0.062R 0.003
MECHANICAL DATA
M
KJ
I
ON
A
C (2 pls)
D
F
E
(4 pls)
B
G
(ty p )
P
(2 pls)
1
5
4
32
H
TetraFET
120W – 28V – 0.8GHz
PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1
PIN 2 DRAIN 1 PIN 4 GATE 2
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