Seme D2054UK Datasheet

D2054UK

Prelim. 9/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage *

BV

GSS

Gate – Source Breakdown Voltage *

I

D(sat)

Drain Current *

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

29W

65V

±20V

2A

–65 to 150°C

200°C

MECHANICAL DATA

A

F

E

B

D

C

G

H

I

P

M

N

O

J

K

L

1

2

3

4

5

6

7

8

Q

R

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 28V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

* Per Side

PIN 1 Source (Common)
PIN 2 Drain 1
PIN 3 Drain 2
PIN 4 Source (Common)

PIN 5 Source (Common)
PIN 6 Gate 2
PIN 7 Gate 1
PIN 8 Source (Common)

DBC4 Package

DIM mm Tol. Inches Tol.

A 6.47 0.08 .255 .003
B 0.76 0.08 .030 .003
C 45° 5° 45

° 5°

D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003

I 7.92 0.08 .312 .003

J 0.20 0.02 .008 .001
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
R 0.25 0.07 0.010 .003

Parameter Test Conditions Min. Typ. Max. Unit

D2054UK

Prelim. 9/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

65

2
2

17

0.36

13
40

20:1

24
12

1

VGS= 0 ID= 10mA

VDS= 28V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 0.4A

PO= 10W
VDS= 28V IDQ= 0.4A
f = 1GHz

VDS= 0V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz

V

mA

m

A
V
S

dB

%
—

pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage *

g

fs

Forward Transconductance *

G

PS

Common Source Power Gain

h

Drain Efficiency

VSWR Load Mismatch Tolerance

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

R

THj–case

Thermal Resistance Junction – Case Max. 6.0°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%

TOTAL DEVICE

PER SIDE

PER SIDE