Seme D2007UK Datasheet
D2007UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
12
34
A
M
F
E
D
C
B
HJ
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
DA
PIN 1 SOURCE PIN 2 DRAIN
PIN 3 SOURCE PIN 4 GATE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 500 MHz
METAL GATE RF SILICON FET
TetraFET
D2007UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
Parameter Test Conditions Min. Typ. Max. Unit
VGS= 0 ID= 10mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 0.4A
PO= 5W
VDS= 28V IDQ= 0.2A
f = 400 MHz
VDS= 0 VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Drain–Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
65
2
1
1 7
0.36
13
40
20:1
20
11
1
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case Max. 6.0°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
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