Seme D1260UK Datasheet
MECHANICAL DATA
TetraFET
D1260UK
METAL GATE RF SILICON FET
GOLD METALLISED
D
(2 pls)
B
A
F
PIN 1 SOURCE (COMMON)
PIN 3 SOURCE (COMMON)
PIN 5 DRAIN
DIM mm Tol. Inches Tol.
A 6.35 DIA 0.13 0.250 DIA 0.005
B 3.17 DIA 0.13 0.125 DIA 0.005
C 18.41 0.25 0.725 0.010
D 5.46 0.13 0.215 0.005
E 5.21 0.13 0.205 0.005
F 7.62 MAX 0.300 MAX
G 21.59 0.38 0.850 0.015
H 3.94 0.13 0.155 0.005
I 12.70 0.13 0.500 0.005
J 0.13 0.03 0.005 0.001
K 24.76 0.13 0.975 0.005
M 2.59 0.13 0.102 0.005
N 4.06 0.25 0.160 0.010
1
C
E
2
3
G
5
4
H
I
KM N
DT
PIN 2 GATE
PIN 4 SOURCE (COMMON)
J
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
rss
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
175W
40V
±20V
40A
–65 to 150°C
200°C
Prelim. 9/95
D1260UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 0 ID= 100mA
VDS= 12.5V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 4A
PO= 60W
VDS= 12.5V IDQ= 0.4A
f = 175MHz
VDS= 0 VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
GS
40
0.5 7
3.2
10
50
20:1
4
1
240
180
16
V
mA
µA
V
S
dB
%
—
pF
pF
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 1.0°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
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