Seme D1217UK Datasheet

D1217UK

Prelim. 9/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

I

D(sat)

Drain Current

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

175W

40V

±20V

20A

–65 to 150°C

200°C

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

40W – 12.5V – 500MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 500 MHz

METAL GATE RF SILICON FET

TetraFET

MECHANICAL DATA

A

B

G

O

I

E

(2 pls)

F

J
Typ.

K

N

Q

M

D

C

P

H

1324

8

675

DD

PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 SOURCE (COMMON)
PIN 7 GATE 1

PIN 2 DRAIN 1
PIN 4 SOURCE (COMMON)
PIN 6 GATE 2
PIN 8 SOURCE (COMMON)

DIM mm Tol. Inches Tol.

A 9.14 0.13 0.360 0.005
B 12.70 0.13 0.500 0.005
C45° 5° 45° 5°
D 6.86 0.13 0.270 0.005
E 0.76 0.13 0.030 0.005
F 9.78 0.13 0.385 0.005
G 19.05 0.25 0.750 0.010
H 4.19 0.13 0.165 0.005

I 3.17 0.13 0.125 0.005
J 1.52R 0.13 0.060R 0.005
K 1.65R 0.13 0.065R 0.005
M 16.51 0.13 0.650 0.005
N 22.86 0.13 0.900 0.005
O 0.13 0.02 0.005 0.001
P 6.35 0.64 0.250 0.025
Q 10.77 0.13 0.424 0.005

D1217UK

Prelim. 9/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

40

2
1

1 5.5

1.6

10
50

20:1

120

80

8

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 100mA

VDS= 12.5V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 2A

PO= 40W
VDS= 12.5V IDQ= 1.6A
f = 400MHz

VDS= 0V VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz

V

mA

m

A
V
S

dB

%

—

pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage*

g

fs

Forward Transconductance*

G

PS

Common Source Power Gain

h

Drain Efficiency

VSWR Load Mismatch Tolerance

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

R

THj–case

Thermal Resistance Junction – Case Max. 1.0°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%

TOTAL DEVICE

PER SIDE

PER SIDE