Seme D1212UK Datasheet
MECHANICAL DATA
TetraFET
D1212UK
METAL GATE RF SILICON FET
GOLD METALLISED
B
(4 pls )
C
1
D
A
N
M
PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1
PIN 3 DRAIN 2 PIN 4 GATE 2
PIN 5 GATE 1
DIM mm Tol. Inches Tol.
A 13.97 0.26 0.550 0.010
B 5.72 0.13 0.225 0.005
C 45° 5° 45° 5°
D 9.78 0.13 0.385 0.005
E 1.65R 0.13 0.065R 0.005
F 23.75 0.13 0.935 0.005
G 1.52R 0.13 0.060R 0.005
H 30.48 0.13 1.200 0.005
I 19.17 0.26 0.755 0.010
J 0.13 0.02 0.005 0.001
K 2.54 0.13 0.100 0.005
M 1.52 0.13 0.060 0.005
N 5.08 0.50 0.200 0.020
32
54
I
F
H
DH
(ty p)
G
E
KJ
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 12.5V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
rss
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
290W
40V
±20V
30A
–65 to 150°C
200°C
Prelim. 1/96
D1212UK
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= 0V VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
= 25°C unless otherwise stated)
case
PER SIDE
VGS= 0 ID= 100mA
VDS= 12.5V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 3A
GS
TOTAL DEVICE
PO= 100W
VDS= 12.5V IDQ= 4A
f = 500MHz
PER SIDE
40
1 5.5
2.4
10
50
20:1
3
1
180
120
12
V
mA
µA
V
mhos
dB
%
—
pF
pF
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 0.6°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
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