Seme D1209UK Datasheet
D1209UK
6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage *
BV
GSS
Gate – Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
100W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(
2 pls
)
K
2
3
E
1
G (4 pls
)
5
4
D
N
M
JIH
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 400MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
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• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
DK
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
PIN 2 DRAIN 1
PIN 4 GATE 2
* Per Side
DIM mm Tol. Inches Tol.
A 6.45 0.13 0.254 0.005
B 1.65R 0.13 0.065R 0.005
C 45° 5° 45° 5°
D 16.51 0.76 0.650 0.03
E 6.47 0.13 0.255 0.005
F 18.41 0.13 0.725 0.005
G 1.52 0.13 0.060 0.005
H 4.82 0.25 0.190 0.010
I 24.76 0.13 0.975 0.005
J 1.52 0.13 0.060 0.005
K 0.81R 0.13 0.032R 0.005
M 0.13 0.02 0.005 0.001
N 2.16 0.13 0.085 0.005
D1209UK
6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
40
1
1
1 7
0.8
10
50
20:1
60
40
4
VGS= 0 ID= 10mA
VDS= 12.5V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 1A
PO= 20W
VDS= 12.5V IDQ= 0.8A
f = 400MHz
VDS= 0 VGS= –5V f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
VDS= 12.5V VGS= 0 f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case Max. 1.75°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
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