Seme D1094UK Datasheet

D1094UK
Prelim. 3/00
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
P
D
BV
DSS
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
50W
65V
±20V
6A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 400MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 11 dB MINIMUM
SOT 171
PIN 1 SOURCE PIN 3 GATE PIN 5 SOURCE
PIN 2 SOURCE PIN 4 DRAIN PIN 6 SOURCE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
Parameter Test Conditions Min. Typ. Max. Unit
D1094UK
Prelim. 3/00
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
65
6 6
17
1.08 11 50
20:1
72 36
3
VGS= 0 ID= 10mA
VDS= 28V VGS= 0 VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 0.6A PO= 20W VDS= 28V IDQ= 0.6A
f = 400MHz VDS= 0 VGS= –5V f = 1MHz VDS= 28V VGS= 0 f = 1MHz VDS= 28V VGS= 0 f = 1MHz
V
mA
m
A V S
dB
%
— pF pF pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Drain–Source
BV
DSS
Breakdown Voltage Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
h
Drain Efficiency VSWR Load Mismatch Tolerance C
iss
Input Capacitance C
oss
Output Capacitance C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case Max.3.5°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%
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