Seme D1083UK Datasheet

LAB

SEME

Semelab plc. Telephone [phone]. Fax [phone]. Email [e-mail]

Prelim. 7/96

D1083UK

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

I

D(sat)

Drain Current

T

STG

Storage Temperature

T

J

Maximum Operating Junction Temperature

62.5W
70V

±20V

5A

–65 to 125°C

150°C

MECHANICAL DATA

Dimensions in mm (inches)

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

4W – 28V – 200MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND
APPLICATIONS

•LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13dB MINIMUM

• SURFACE MOUNT

TO–263 PACKAGE

PIN 1 – GATE
PIN 3 – SOURCE

PIN 2 – DRAIN
PIN 4 – DRAIN

ABSOLUTE MAXIMUM RATINGS (T

C

= 25°C unless otherwise stated)

APPLICATIONS

• LOW COST DC to 200 MHz

METAL GATE RF SILICON FET

TetraFET

4

LAB

SEME

Semelab plc. Telephone [phone]. Fax [phone]. Email [e-mail]

Prelim. 7/96

D1083UK

Parameter Test Conditions Min. Typ. Max. Unit

70

1
1

1 7

0.8
13
40

20:1

60
30

2.5

VGS= 0 ID= 10mA

VDS= 28V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 1A
VDS= 28V IDQ= 0.1A

PO= 4W f = 200MHz

VDS= 0V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz

V

mA

µA

V
S

dB

%
—

pF

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage*

g

fs

Forward Transconductance*

G

PS

Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
C

iss

Input Capacitance
C

oss

Output Capacitance
C

rss

Reverse Transfer Capacitance

R

THj–case

Thermal Resistance Junction – Case Max. 2°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%