Seme D1082UK Datasheet
LAB
SEME
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1082UK
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
I
D(sat)
Drain Current
T
STG
Storage Temperature
T
J
Maximum Operating Junction Temperature
62.5W
70V
±20V
5A
–65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm (inches)
6
.
1
0
(
0
.
2
4
0
)
7˚
± 1˚
2.29
(0.090)
0.51
(0.020)
REF.
1
.
1
4
(
0
.
0
4
5
)
7˚
± 1˚
7˚
± 1˚
213
0
.
6
4
(
0
.
0
2
5
)
4
.
3
2
(
0
.
1
7
0
)
6.35
(0.250)
0.64
(0.025)
5.33
(0.210)
0.89
(0.035)
2 pls.
1.02
(0.040)
0.51
(0.020)
REF.
1
6
.
7
6
(
0
.
6
6
0
)
2.29
(0.090)
4.57
(0.180)
0.76
(0.030)
REF.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
TO–251 PACKAGE
PIN 1 – GATE
PIN 3 – SOURCE
PIN 2 – DRAIN
PIN 4 – DRAIN
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise stated)
APPLICATIONS
• LOW COST DC to 200 MHz
METAL GATE RF SILICON FET
TetraFET
4
LAB
SEME
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1082UK
Parameter Test Conditions Min. Typ. Max. Unit
70
1
1
1 7
0.8
13
40
20:1
60
30
2.5
VGS= 0 ID= 10mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 1A
VDS= 28V IDQ= 0.1A
PO= 4W f = 200MHz
VDS= 0V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise stated)
Drain–Source
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
THj–case
Thermal Resistance Junction – Case Max. 2°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Loading...