Seme D1053UK Datasheet
MECHANICAL DATA
TetraFET
D1053UK
METAL GATE RF SILICON FET
GOLD METALLISED
B
A
C
(2 pls)
D
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 DRAIN 4
PIN 7 GATE 3
PIN 9 GATE 1
DIM mm Tol. Inches Tol.
A 1.52 0.13 0.060 0.005
B 1.52 0.13 0.060 0.005
C 45° 5° 45° 5°
D 16.38 0.26 0.645 0.010
E 6.35 0.13 0.250 0.005
F 18.41 0.13 0.725 0.005
G 12.70 0.26 0.500 0.010
H 5.08 0.13 0.200 0.005
I 24.76 0.13 0.975 0.005
J 1.52 0.13 0.060 0.005
K 0.81R 0.13 0.032R 0.005
M 0.13 0.02 0.005 0.001
N 2.16 0.13 0.085 0.005
O 1.65R 0.13 0.065R 0.005
1
E
B
A
352
4
7
869
F
G
IJH
DB
PIN 2 DRAIN 1
PIN 4 DRAIN 3
PIN 6 GATE 4
PIN 8 GATE 2
K
O
(2 pls)
MULTI-PURPOSE SILICON
DMOS RF FET
50W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
NM
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 7.5 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
175W
70V
±20V
5A
–65 to 150°C
200°C
Prelim. 3/95
D1053UK
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
V
GS(th)match
G
PS
η
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= 0 VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
= 25°C unless otherwise stated)
case
PER SIDE
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 1A
ID= 10mA VDS= V
GS
GS
TOTAL DEVICE
PO= 50W
VDS= 28V IDQ= 0.8A
f = 1GHz
PER SIDE
70
1
1
17
0.8
0.1
7.5
45
20:1
60
30
2.5
V
mA
µA
V
mhos
V
dB
%
—
pF
pF
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 1.0°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
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