Seme D1028UK Datasheet
D1028UK
01/01
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DIM Millimetres Tol. Inches Tol.
A 19.05 0.50 0.75 0.020
B 10.77 0.13 0.424 0.005
C 45° 5° 45° 5°
D 9.78 0.13 0.385 0.005
E 5.71 0.13 0.225 0.005
F 27.94 0.13 1.100 0.005
G 1.52R 0.13 0.060R 0.005
H 10.16 0.13 0.400 0.005
I 22.22 MAX 0.875 MAX
J 0.13 0.02 0.005 0.001
K 2.72 0.13 0.107 0.005
M 1.70 0.13 0.067 0.005
N 5.08 0.50 0.200 0.020
O 34.03 0.13 1.340 0.005
P 1.57R 0.08 0.062R 0.003
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
438W
70V
±20V
30A
–65 to 150°C
200°C
MECHANICAL DATA
M
KJ
I
ON
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(ty p)
P
(2 pls)
1
5
4
32
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
300W – 28V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
DR
PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1
PIN 3 DRAIN 2 PIN 4 GATE 2
PIN 5 GATE 1
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
D1028UK
01/01
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
70
6
1
17
4.8
0.1
13
60
20:1
360
180
15
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
GS
VDS= 10V ID= 6A
ID= 10mA VDS= V
GS
PO= 300W
VDS= 28V IDQ= 2A
f = 175MHz
VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
V
mA
m
A
V
mhos
V
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case Max. 0.4°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
V
GS(th)match
G
PS
h
VSWR
C
iss
C
oss
C
rss
D1028UK
01/01
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Figure 1 – Power Output and Efficiency
vs. Power Input.
Figure 2 – Power Output & Gain
vs. Power Input.
f = 175MHz
Idq= 2A
Vds= 28V
f = 175MHz
Idq= 2A
Vds= 28V
2nd harmonic = -28dBc
3rd harmonic = -40dBc
output at 350W
Figure 3 – IMD vs. Output Power.
Figure 4 – IMD & Gain vs. I
dq
f1= 175.0 MHz
f2= 175.1 MHz
VDS= 28V
f
1
= 175.0MHz
f2= 175.1MHz
P
out
= 130W PEP
Vds= 28V
400
350
300
250
P
out
200
W
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
P
W
in
Pout
Drain Efficiency
100
90
80
70
60
50
40
30
20
Drain Efficiency
%
400
350
300
250
P
out
200
W
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
Pout
Gain
P
W
in
20
18
16
14
12
12
Gain
dB
400
350
300
250
P
out
200
W
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
P
W
in
Pout
Drain Efficiency
100
90
80
70
Drain Efficiency
60
%
50
40
30
20
-20
-30
IMD
dBc
-40
-50
0 0.5 1 1.5 2 2.5
IMD3
IMD5
Gain
I
A
dq
18.5
18.5
17.5
17.5
16.5
16.5
15.5
15.5
Gain
dB
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