Seme D1018UK Datasheet
MECHANICAL DATA
C
K
J
Typ .
1324
8
B
A
675
D
M
Q
E
(2 pls)
TetraFET
D1018UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
G
F
FEATURES
100W – 28V – 500MHz
PUSH–PULL
P
I
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 SOURCE (COMMON)
PIN 7 GATE 1
DIM mm Tol. Inches Tol.
A 9.14 0.13 0.360 0.005
B 12.70 0.13 0.500 0.005
C 45° 5° 45° 5°
D 6.86 0.13 0.270 0.005
E 0.76 0.13 0.030 0.005
F 9.78 0.13 0.385 0.005
G 19.05 0.25 0.750 0.010
H 4.19 0.13 0.165 0.005
I 3.17 0.13 0.125 0.005
J 1.52R 0.13 0.060R 0.005
K 1.65R 0.13 0.065R 0.005
M 16.51 0.13 0.650 0.005
N 22.86 0.13 0.900 0.005
O 0.13 0.02 0.005 0.001
P 6.35 0.64 0.250 0.025
Q 10.77 0.13 0.424 0.005
N
DD
PIN 2 DRAIN 1
PIN 4 SOURCE (COMMON)
PIN 6 GATE 2
PIN 8 SOURCE (COMMON)
O
H
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
= 25°C unless otherwise stated)
case
250W
70V
±20V
15A
–65 to 150°C
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
D1018UK
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
= 25°C unless otherwise stated)
case
PER SIDE
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 3A
GS
TOTAL DEVICE
PO= 100W
VDS= 28V IDQ= 1.2A
f = 500MHz
PER SIDE
70
3
1
17
2.4
10
50
20:1
180
90
7.5
V
mA
µA
V
S
dB
%
—
pF
pF
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 0.7°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
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