Seme D1010UK Datasheet

D1010UK

Prelim. 01/01

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

DIM Millimetres Tol. Inches Tol.

A 19.05 0.50 0.75 0.020
B 10.77 0.13 0.424 0.005
C 45° 5° 45° 5°
D 9.78 0.13 0.385 0.005
E 5.71 0.13 0.225 0.005
F 27.94 0.13 1.100 0.005
G 1.52R 0.13 0.060R 0.005
H 10.16 0.13 0.400 0.005

I 22.22 MAX 0.875 MAX

J 0.13 0.02 0.005 0.001
K 2.72 0.13 0.107 0.005
M 1.70 0.13 0.067 0.005
N 5.08 0.50 0.200 0.020
O 34.03 0.13 1.340 0.005
P 1.57R 0.08 0.062R 0.003

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage *

BV

GSS

Gate – Source Breakdown Voltage *

I

D(sat)

Drain Current *

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

350W

70V

±20V

20A

–65 to 150°C

200°C

MECHANICAL DATA

M

KJ

I

ON

A

C
(2 pls)

D

F

E

(4 pls)

B

G

(ty p)

P

(2 pls)

1

5

4

32

H

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

125W – 28V – 500MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

DR

PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1
PIN 3 DRAIN 2 PIN 4 GATE 2
PIN 5 GATE 1

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 400 MHz

METAL GATE RF SILICON FET

TetraFET

* Per Side

D1010UK

Prelim. 01/01

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

70

4
1

17

3.2

10
50

20:1

240
120

10

VGS= 0 ID= 100mA

VDS= 28V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 5A

PO= 125W
VDS= 28V IDQ= 2A
f = 400MHz

VDS= 0 VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz

V

mA

m

A
V
S

dB

%

—

pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*

Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

R

THj–case

Thermal Resistance Junction – Case Max. 0.5°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%

TOTAL D

PER SIDE

PER SIDE

BV

DSS

I

DSS

I

GSS

V

GS(th)

g

fs

G

PS

h

VSWR

C

iss

C

oss

C

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