Seme D1007UK Datasheet

D1007UK

Prelim. 6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

P

D

Power Dissipation

BV

DSS

Drain – Source Breakdown Voltage *

BV

GSS

Gate – Source Breakdown Voltage *

I

D(sat)

Drain Current *

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

100W

70V

±20V

5A

–65 to 150°C

200°C

MECHANICAL DATA

F

A

C

B

(

2 pls

)

K

2

3

E

1

G (4 pls

)

5

4

D

N

M

JIH

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

40W – 28V – 500MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

rss

• USEFUL POat 1 GHz

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

DK

PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1

PIN 2 DRAIN 1
PIN 4 GATE 2

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

DIM mm Tol. Inches Tol.

A 6.45 0.13 0.254 0.005
B 1.65R 0.13 0.065R 0.005
C45° 5° 45° 5°
D 16.51 0.76 0.650 0.03
E 6.47 0.13 0.255 0.005
F 18.41 0.13 0.725 0.005

G 1.52 0.13 0.060 0.005

H 4.82 0.25 0.190 0.010

I 24.76 0.13 0.975 0.005
J 1.52 0.13 0.060 0.005
K 0.81R 0.13 0.032R 0.005

M 0.13 0.02 0.005 0.001

N 2.16 0.13 0.085 0.005

* Per Side

Parameter Test Conditions Min. Typ. Max. Unit

D1007UK

Prelim. 6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

70

1
1

17

0.8

13
50

20:1

60
30

2.5

VGS= 0 ID= 100mA

VDS= 28V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V

GS

VDS= 10V ID= 1A

PO= 40W
VDS= 28V IDQ= 0.4A
f = 400MHz

VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz

V

mA

m

A
V
S

dB

%

—

pF
pF
pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain–Source

BV

DSS

Breakdown Voltage
Zero Gate Voltage

I

DSS

Drain Current

I

GSS

Gate Leakage Current

V

GS(th)

Gate Threshold Voltage *

g

fs

Forward Transconductance *

G

PS

Common Source Power Gain

h

Drain Efficiency

VSWR Load Mismatch Tolerance

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

R

THj–case

Thermal Resistance Junction – Case Max. 1.75°C / W

THERMAL DATA

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2%

TOTAL DEVICE

PER SIDE

PER SIDE