Seme D1004UK Datasheet

MECHANICAL DATA

TetraFET

D1004UK

METAL GATE RF SILICON FET

GOLD METALLISED

D

(2 pls)

B

A

F

PIN 1 SOURCE (COMMON)
PIN 3 SOURCE (COMMON)
PIN 5 DRAIN

DIM mm Tol. Inches Tol.

A 6.35 DIA 0.13 0.250 DIA 0.005
B 3.17 DIA 0.13 0.125 DIA 0.005
C 18.41 0.25 0.725 0.010
D 5.46 0.13 0.215 0.005
E 5.21 0.13 0.205 0.005
F 7.62 MAX 0.300 MAX
G 21.59 0.38 0.850 0.015
H 3.94 0.13 0.155 0.005

I 12.70 0.13 0.500 0.005

J 0.13 0.03 0.005 0.001
K 24.76 0.13 0.975 0.005
M 2.59 0.13 0.102 0.005
N 4.06 0.25 0.160 0.010

1

C

E

3

2

G

5

4

H

I

KM N

DT

PIN 2 GATE
PIN 4 SOURCE (COMMON)

J

MULTI-PURPOSE SILICON

DMOS RF FET

80W – 28V – 175MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 16 dB MINIMUM

APPLICATIONS

• HF/VHF COMMUNICATIONS

from 1 MHz to 175 MHz

rss

ABSOLUTE MAXIMUM RATINGS (T

P

D

BV
BV
I

D(sat)

T

stg

T

j

DSS
GSS

Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature

= 25°C unless otherwise stated)

case

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

175W

70V

±20V

20A

–65 to 150°C

200°C

Prelim. 6/99

D1004UK

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter Test Conditions Min. Typ. Max. Unit

BV

I

DSS

I

GSS

V

GS(th)

g

fs

G

PS

η Drain Efficiency
VSWR Load Mismatch Tolerance
C

iss

C

oss

C

rss

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

Drain–Source

DSS

Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

VGS= 0 ID= 100mA

VDS= 28V VGS= 0
VGS= 20V VDS= 0

ID= 10mA VDS= V
VDS= 10V ID= 4A
PO= 80W
VDS= 28V IDQ= 0.4A

f = 175MHz
VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz

GS

70

4
1

17

3.2
16
50

20:1

240
120

10

V

mA

µA

V
S

dB

%

—
pF
pF
pF

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

R

THj–case

Thermal Resistance Junction – Case Max. 1.0°C / W

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 6/99