Seme D1002UK Datasheet
MECHANICAL DATA
TetraFET
D1002UK
METAL GATE RF SILICON FET
GOLD METALLISED
HJ
PIN 1 SOURCE
PIN 3 SOURCE
DIM mm Tol. Inches Tol.
A 24.76 0.13 0.975 0.005
B 18.42 0.13 0.725 0.005
C 45° 5° 45° 5°
D 6.35 0.13 0.25 0.005
E 3.17 0.13 0.125 DIA 0.005
F 5.71 0.13 0.225 0.005
G 9.52 0.13 0.375 0.005
H 6.60 REF 0.260 REF
I 0.13 0.02 0.005 0.001
J 4.32 0.13 0.170 0.005
K 2.54 0.13 0.100 0.005
M 20.32 0.25 0.800 0.010
A
B
C
MULTI-PURPOSE SILICON
DMOS RF FET
12
D
34
M
G
E
F
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
K
I
• SUITABLE FOR BROAD BAND APPLICATIONS
DA
PIN 2 DRAIN
PIN 4 GATE
•LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
40W – 28V – 175MHz
SINGLE ENDED
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ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
87W
70V
±20V
10A
–65 to 150°C
200°C
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D1002UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
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* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 0 ID= 100mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 2A
PO= 40W
VDS= 28V IDQ= 0.2A
f = 175MHz
VDS= 28V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
GS
70
2
1
17
1.6
16
50
20:1
120
60
5
V
mA
µA
V
S
dB
%
—
pF
pF
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 2.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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