Seme BYV143-40AM, BYV143-45RM, BYV143-45M, BYV143-45AM, BYV143-40RM Datasheet
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BYV143-40MA BYV143-45MA
BYV143-40AM BYV143-45AM
BYV143-40RM BYV143-45RM
Prelim. 02/98
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
RRM
Peak Repetitive Reverse Voltage
V
RWM
Crest Working Reverse Voltage
V
R
Continuous Reverse Voltage
I
O
Output Current (d= 0.5)
I
F(RMS)
Forward RMS Current
I
FRM
Repetitive Peak Forward Current
I
FSM
Non Repetitive Peak Forward Current (per diode) t = 10 ms
I
FSM
Non Repetitive Peak Forward Current (per diode) t = 8.3 ms
I
2
TI
2
T for fusing (per diode) t = 10 ms
I
RRM
Reverse Surge Current tp= 2 ms
d
= 0.001
I
RSM
Reverse Surge Current tp= 100 ms
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
40V 45V
40V 45V
40V 45V
30A
40A
250A
200A
220A
200A
2
s
2A
2A
–65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
16.5
13.5
10.6
13.70
2.54
BSC
10.6
3.6
Dia.
0.8
4.6
1.0
2.70
BSC
123
DUAL SCHOTTKY
BARRIER DIODE
IN TO220 METAL PACKAGE
FOR HI–REL APPLICATIONS
FEATURES
• HERMETIC TO220 METAL PACKAGE
• ISOLATED CASE
• SCREENING OPTIONS AVAILABLE
• OUTPUT CURRENT 30A
•LOW VF( VF< 0.6V)
• LOW LEAKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
BYV143–40M BYV143–45M
TO220 METAL PACKAGE
Common Cathode Common Anode Series Connection
BYV143-xxM BYV143-xxAM BYV143-xxRM
1 = A1Anode 1
2 = K Cathode
3 = A2Anode 2
1 = K1Cathode 1
2 = A Anode
3 = K2Cathode 2
1 = K1Cathode 1
2 = Centre Tap
3 = A2Anode
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BYV143-40MA BYV143-45MA
BYV143-40AM BYV143-45AM
BYV143-40RM BYV143-45RM
Prelim. 02/98
LAB
SEME
Parameter Test Conditions Min. Typ. Max. Unit
V
F
Forward Voltage
I
R
Reverse Current
C
d
Junction Capacitance
IF= 15A Tj= 150°C
IF= 20A Tj= 25°C
VR= V
RWM
(Max)Tj= 125°C
VR= V
RWM
(Max)Tj= 25°C
VR= 5 V f = 1 MHz
0.6
0.8
30
500
500
V
V
mA
m
A
pF
Parameter Min. Typ. Max. Unit
(Both Diodes)
R
q
JC
Thermal Resistance Junction to Case
(Per Diode)
R
q
JA
Thermal Resistance Junction to Ambient
1.4
2.3
60
°C / W
ELECTRICAL CHARACTERISTICS (Per Diode)
THERMAL CHARACTERISTICS
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