Seme BUX51 Datasheet
300V
300V
200V
260V
7V
3.5A
5A
0.7A
10W
200°C
-65°C to +200°C
Prelim.10/99
BUX51
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
CBO
Collector – Base Voltage
V
CEX
Collector – Emitter Voltage (VBE= -1.5V)
V
CEO
Collector – Emitter Voltage
V
ER
Collctor – Emitter Voltage R
BE
= 100
W
V
EBO
Emitter – Base Voltage
I
C
Collector Current
I
CM
Peak Collector Current (tp= 10 ms)
I
B
Base Current
P
tot
Total Power Dissipation at T
case
£
25°C
T
stg
,
Storage Temperature
T
j
Junction Temperature
NPN SILICON
TRANSISTOR
FEATURES
• FAST SWITCHING
• HIGH PULSE POWER
ABSOLUTE MAXIMUM RATINGS(T
case
= 25°C unless otherwise stated)
TO39
APPLICATIONS
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
MECHANICAL DATA
Dimensions in mm(inches)
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
0.89
max.
(0.035)
12.70
(0.500)
7.75 (0.305)
min.
8.51 (0.335)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
123
45˚
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUX51
Prelim.10/99
Parameter Test Conditions Min. Typ. Max. Unit
IC= 200mA IB= 0.5A
L = 25mH
IC= 0 IE= 5mA
VCE= 160V IB= 0
VCE= 250V VBE= –1.5V
TC= 125°C
IC= 0 VEB= 5V
IC= 1A IB= 0.1A
IC= A IB= 0.2A
IC= 2A IB= 0.2A
VCE= 40V t = 1s
IC= 0.5A VCE= 10V
f = 10MHz
IC= 2A IB= 0.2A
IC= 2A IB1=0.2A
IB2- 0.2A
IC= 2A IB1=0.2A
IB2- 0.2A
Collector - Emitter Sustaining
Voltage
Emitter – Base Breakdown
Voltage
Collector Emitter Cut-off
Current
Collector Emitter Cut-off
Current
Emitter–Base Cut-off Current
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Second Breakdown
Collector Current
Transition Frequency
Turn–On Time
Fall Time
Carrier Storage Time
200
7
0.5
0.1
0.5
0.5
0.15 0.5
0.3 1
0.9 1.3
0.25
8
0.45 0.8
0.2 0.5
1.2 2.5
V
V
mA
mA
mA
V
V
A
MHz
m
s
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
THERMAL CHARACTERISTICS
R
q
JC
Junction to Case Thermal Resistance 17.5 °C/W
R
q
JA
Junction to Ambient Thermal Resistance 175 °C/W
V
CEO(sus)
V
(BR)EBO
I
CEO
I
CEX
I
EBO
V
CE(sat)*
V
BE(sat)*
I
S/b
f
t
t
d + tr
t
f
*Pulsed tp =300
m
s @< 1%
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