Seme BUL66A Datasheet
BUL66A
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
Designed for use in
electronic ballast applications
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
V
CBO
Collector – Base Voltage(IE=0)
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
350V
160V
10V
16A
25A
5A
25W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
5.97 (0.235)
6.22 (0.245)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
8.89 (0.350)
9.78 (0.385)
1.09 (0.043)
1.30 (0.051)
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
0.46 (0.018)
0.61 (0.024)
1.04 (0.041)
1.14 (0.045)
123
I-PAK(TO251)
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
BUL66A
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
Parameter Test Conditions Min. Typ. Max. Unit
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
f
t
C
ob
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
Output Capacitance
160
350
10
10
100
100
10
100
30 80
25 60
5
.07 0.2
0.2 0.6
0.6 1.2
0.95 1.2
1.2 1.8
20
75
V
µA
µA
µA
—
V
V
MHz
pF
IC= 10mA
IC= 1mA
IE= 1mA
VCB= 350V
TC = 125°C
IB= 0 VCE= 150V
VEB= 9V
IC= 0 TC = 125°C
IC= 0.3A VCE= 5V
IC= 5A VCE= 5V
IC= 12A VCE= 1V
TC = 125°C
IC= 1A IB= 0.1A
IC= 5A IB= 0.5A
IC= 10A IB= 1.0A
IC= 5A IB= 0.5A
IC= 10A IB= 1.0A
IC= 0.2A VCE= 4V
VCB= 10V f = 1MHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp= 300µs , δ < 2%
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
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