Seme BUL58BSMD Datasheet

Prelim. 7/00

BUL58BSMD

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage (IB= 0)

V

EBO

Emitter – Base Voltage (IC= 0)

I

C

Collector Current

I

C(PK)

Peak Collector Current

I

B

Base Current

P

tot

Total Dissipation at T

case

= 25°C

Derate above 25°C when used on efficient heatsink

T

stg

Operating and Storage Temperature Range

180V

90V
10V

7A

10A

2A

50W

0.28W/°C

–65 to 200°C

MECHANICAL DATA

Dimensions in mm

3.60 (0.142)
Max.

3.70 (0.146)

3.41 (0.134)

3.70 (0.146)

3.41 (0.134)

0.89

(0.035)

min.

4.14 (0.163)

3.84 (0.151)

10.69 (0.421)

10.39 (0.409)

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

16.02 (0.631)

15.73 (0.619)

0.50 (0.020)

0.26 (0.010)

0.76
(0.030)

min.

13

2

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

•SEMEFAB DESIGNED AND DIFFUSED

•HIGH VOLTAGE

•FAST SWITCHING

•HIGH ENERGY RATING

SMD1 PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.

• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.

• Triple Guard Rings for improved control of
high voltages.

Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter

Prelim. 7/00

BUL58BSMD

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

90

180

10

10
100
100

10
100

30 80
25 60

20 50

0.2

0.6

1.5

1.1

2.0

20
44

V

m

A

m

A

m

A

—

V

V

MHz

pF

IC= 10mA
IC= 1mA
IE= 1mA
VCB= 180V

TC = 125°C
IB= 0 VCE= 80V
IC= 0
VEB= 9V TC = 125°C
IC= 0.3A VCE= 4V
IC= 3A VCE= 4V
IC= 5A VCE= 4V

TC = 125°C
IC= 1A IB= 0.1A
IC= 3A IB= 0.3A
IC= 6A IB= 0.6A
IC= 3A IB= 0.3A
IC= 6A IB= 0.5A

IC= 0.2A VCE= 4V
VCB= 20V f = 1MHz

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage

Collector Cut–Off Current
Collector Cut–Off Current
Emitter Cut–Off Current

DC Current Gain

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Transition Frequency
Output Capacitance

* Pulse test tp= 300ms ,

d <

2%

V

CEO(sus)

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE*

V

CE(sat)*

V

BE(sat)*

f

t

C

ob

DYNAMIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS