Seme BUL56BSMD Datasheet

Prelim. 7/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUL56BSMD
V
CBO
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
T
stg
Storage Temperature Range
R
th
Thermal Resistance Junction – Case
200V 100V
7V
14A
4A
85W
4.8W/°C
–65 to 200°C
175°C / W
MECHANICAL DATA
Dimensions in mm
3.60 (0.142) Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14 (0.163)
3.84 (0.151)
10.69 (0.421)
10.39 (0.409)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
0.76 (0.030)
min.
13
2
NPN
FAST SWITCHING
TRANSISTOR
FEATURES
•LOW SATURATION VOLTAGE
•ULTRA FAST TURN–ON AND TURN–OFF SWITCHING (tr/ tf= 40ns)
SMD1
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• High speed TO220 transistor suited for low voltage applications.
• High frequency and high efficiency converters, switching regulators and motor controls.
• Ideally suited for 12V and 24V inverters.
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
100
7
3
1 1
0.6
1.5 2
0.2 0.6
0.4 1
0.04 0.25
0.5
0.04 2
0.15
Parameter Test Conditions Min. Typ. Max. Unit
V
mA
mA mA
V V
m
S
m
S
Prelim. 7/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUL56BSMD
IC= 200mA IE= 1mA IB= 0 VCE= 200V RBE= 50
W
TC = 125°C IE= 0 VCB= 200V VBE= –1.5V TC = 125°C IC= 0 VEB= 5V IC= 5A IB= 500mA IC= 10A IB= 1A IC= 10A IB= 1A
VCC= 50V IC= 12A VBE= –6V IB1= 1.2A RBB= 2.5
W
VCC= 50V IC= 12A VBE= –5V IB1= 1.2A LB= 0.5mH
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Collector – Emitter Sustaining Voltage Emitter – Base Breakdown Voltage
Collector Cut–Off Current
Collector – Base Cut–Off Current Emitter Cut–Off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage
Turn–On Time Storage Time Fall Time
Storage Time Fall Time Storage Time (T
j
= 125°C)
Fall Time (Tj = 125°C)
* Pulse test tp= 300ms ,
d £
2%
V
CEO(sus)*
V
(BR)EBO*
I
CER*
I
CBO*
I
EBO*
V
CE(sat)*
V
BE(sat)*
t
on
t
s
t
f
t
s
t
f
t
s
t
f
SWITCHING CHARACTERISTICS (resistive load)
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (inductive load)
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