Prelim. 7/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUL56BSMD
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
T
stg
Storage Temperature Range
R
th
Thermal Resistance Junction – Case
200V
100V
7V
14A
4A
85W
4.8W/°C
–65 to 200°C
175°C / W
MECHANICAL DATA
Dimensions in mm
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14 (0.163)
3.84 (0.151)
10.69 (0.421)
10.39 (0.409)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
0.76
(0.030)
min.
13
2
NPN
FAST SWITCHING
TRANSISTOR
FEATURES
•LOW SATURATION VOLTAGE
•ULTRA FAST TURN–ON AND TURN–OFF
SWITCHING (tr/ tf= 40ns)
SMD1
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• High speed TO220 transistor suited for low
voltage applications.
• High frequency and high efficiency
converters, switching regulators and motor
controls.
• Ideally suited for 12V and 24V inverters.
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
100
7
3
1
1
0.6
1.5
2
0.2 0.6
0.4 1
0.04 0.25
0.5
0.04
2
0.15
Parameter Test Conditions Min. Typ. Max. Unit
V
mA
mA
mA
V
V
m
S
m
S
Prelim. 7/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUL56BSMD
IC= 200mA
IE= 1mA
IB= 0 VCE= 200V
RBE= 50
W
TC = 125°C
IE= 0 VCB= 200V
VBE= –1.5V TC = 125°C
IC= 0 VEB= 5V
IC= 5A IB= 500mA
IC= 10A IB= 1A
IC= 10A IB= 1A
VCC= 50V IC= 12A
VBE= –6V IB1= 1.2A
RBB= 2.5
W
VCC= 50V IC= 12A
VBE= –5V IB1= 1.2A
LB= 0.5mH
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Collector – Emitter Sustaining Voltage
Emitter – Base Breakdown Voltage
Collector Cut–Off Current
Collector – Base Cut–Off Current
Emitter Cut–Off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Turn–On Time
Storage Time
Fall Time
Storage Time
Fall Time
Storage Time (T
j
= 125°C)
Fall Time (Tj = 125°C)
* Pulse test tp= 300ms ,
d £
2%
V
CEO(sus)*
V
(BR)EBO*
I
CER*
I
CBO*
I
EBO*
V
CE(sat)*
V
BE(sat)*
t
on
t
s
t
f
t
s
t
f
t
s
t
f
SWITCHING CHARACTERISTICS (resistive load)
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (inductive load)