Seme BUL54ASMD Datasheet
Prelim. 7/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUL54ASMD
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage
I
C
Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
T
stg
Operating and Storage Temperature Range
R
th
Thermal Resistance Junction – Case
1000V
500V
10V
2A
4A
0.8A
35W
0.2W/°C
–65 to 200°C
3.5°C/W
MECHANICAL DATA
Dimensions in mm
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14 (0.163)
3.84 (0.151)
10.69 (0.421)
10.39 (0.409)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
0.76
(0.030)
min.
13
2
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
•SEMEFAB DESIGNED AND DIFFUSED DIE
•HIGH VOLTAGE
•FAST SWITCHING (tf= 40ns)
•EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
•HIGH ENERGY RATING
•EFFICIENT POWER SWITCHING
•MILITARY AND HI–REL OPTIONS
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
FEATURES
• Multi–base design for efficient energy
distribution across the chip resulting in
significantly improved switching and energy
ratings across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
SMD1 Package
Parameter Test Conditions Min. Typ. Max. Unit
500
1000
10
100
10
100
10
100
20 40
12 18
58
47
0.05 0.1
0.15 0.2
0.3 0.5
0.8 1.0
0.9 1.1
0.8 1.0
20
20 35
0.8
0.08 0.2
24
0.04 0.1
V
m
A
m
A
m
A
—
V
V
V
MHz
pF
A
m
s
Prelim. 7/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUL54ASMD
IC= 100mA
IC= 1mA
IE= 1mA IC= 0
IB= 0 VCC= 500V
IE= 0 VCB= 1000V
TC = 125°C
IC= 0 VEB= 5V
TC = 125°C
IC= 100mA VCE= 4V
IC= 500mA VCE= 4V
IC= 1A VCE= 4V
TC = 125°C
IC= 100mA IB= 20mA
IC= 500mA IB= 100mA
IC= 1A IB= 200mA
IC= 500mA IB= 100mA
IC= 1A IB= 200mA
IC= 500mA VCE= 4V
IC= 100mAVCE= 4V
f = 10MHz
VCB= 20V f = 1MHz
IE= 0
VCE= 50V t = 1s
VCC= 150V IC= 1A
I
B1
= 0.2A IB2= –0.4A
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Emitter Cut–Off Current
Collector – Base Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
Transition Frequency
Output Capacitance
Second Breakdown Collector Current
On Time
Storage Time
Fall Time
* Pulse test tp= 300ms ,
d £
2%
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEO*
I
CBO*
I
EBO*
h
FE*
V
CE(sat)*
V
BE(sat)*
V
BE(on)*
f
T
C
ob
I
S/B
t
on
t
s
t
f
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SECOND BREAKDOWN
SWITCHING CHARACTERISTICS (resistive load)
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