Seme BUL53BSMD Datasheet

BUL53BSMD

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 7/00

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage (IB= 0)

V

EBO

Emitter – Base Voltage (IC= 0)

I

C

Collector Current

I

C(PK)

Peak Collector Current

I

B

Base Current

P

D

Power Dissipation

R

?

Thermal Impedance (when mounted on thermally conducting PCB)

T

j

Maximum Junction Temperature

T

stg

Storage Temperature Range

500V
250V

10V
12A
20A

3A

60W

3.0°C/W
200°C

–55 to +200°C

MECHANICAL DATA

Dimensions in mm

)
)

ADVANCED DISTRIBUTED

BASE DESIGN

HIGH VOLTAGE, HIGH SPEED NPN

SILICON POWER TRANSISTOR

SMD1

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• Multi-Base design for efficient energy
distribution across the chip.

• SIgnificantly improved switching and energy
ratings across full temperature range.

• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.

• Triple guard rings for improved control of
high voltages.

• CERAMIC SURFACE MOUNT PACKAGE

• FULL MIL/AEROSPACE TEMPERATURE
RANGE

• SCREENING OPTIONS FOR MILITARY AND
SPACE APPLICATIONS

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE (V

CBO

= 800V)

• FAST SWITCHING (t

f

= 100ns)

• HIGH ENERGY RATING

Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

4.14 (0.163)

3.84 (0.151)

min.

0.76
(0.030)

3.70 (0.146)

3.41 (0.134)

13

3.60 (0.142)
Max.

10.69 (0.421)

10.39 (0.409)

2

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

16.02 (0.631)

15.73 (0.619)

0.50 (0.020

0.26 (0.010

BUL53BSMD

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 7/00

Parameter Test Conditions Min. Typ. Max. Unit

Parameter Test Conditions Min. Typ. Max. Unit

IC= 100mA

I

C

= 1mA

I

B

= 1mA IC= 0

I

B

= 0 VCE= 250V

I

E

= 0 VCB= 500V

T

C

= 125°C

I

C

= 0 VEB= 5V

T

C

= 125°C

I

C

= 100mA IB= 10mA

I

C

= 2A IB= 200mA

I

C

= 5A IB= 500mA

I

C

= 2A IB= 200mA

I

C

= 5A IB= 500mA

I

C

= 1A VCE= 4V

I

C

= 100mA VCE= 4V

I

C

= 2A VCE= 4V

I

C

= 5A VCE= 4V

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Collector - Emitter
sustaining voltage
Collector - Base
breakdown voltage
Emitter - Base
breakdown voltage
Collector cut-off current
Collector - Base cut-off
current

Emitter cut-off current

Collector - Emitter
saturation voltage

Base - Emitter
saturation voltage
Base - Emitter
saturation voltage

DC Current gain

250

500

10

100

10

100

10

100

0.05 0.1

0.15 0.3

0.3 0.6

0.8 1.1

0.9 1.2

0.8 1.0

20 45
20 40
20

V

V

V

m

A

m

A

m

A

V

V

V

—

Transition frequency

Output capacitance

I

C

= 100mA VCE= 4V
f = 10MHz
V

CB

= 20V IE = 0

f = 1.0MHz

20

200

MHz

pF

* Pulse test tp= 300ms ,

d £

2%

DYNAMIC CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

V

CEO(sus)*

V

(BR)CBO*

V

(BR)EBO*

I

CEO*

I

CBO*

I

EBO*

V

CE(sat)*

V

BE(sat)*

V

BE(on)*

h

FE*

f

T

C

ob