Seme BUL50A Datasheet
Prelim. 3/95
LAB
SEME
BUL50A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
1000V
500V
10V
15A
30A
5A
125W
–55 to +175°C
MECHANICAL DATA
Dimensions in mm (inches)
1
32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.80 (0.819)
21.46 (0.845)
6.15
(0.242)
BSC
19.81 (0.780)
20.32 (0.800)
4.50
(0.177 )
Max.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
5.5
1
1
1.
15
0.
95
13.6
min
4
.
25
4.15
Dia
.
4.4
1
5.2
max
1
4
2.0
4.6
m
ax
12.7
m
a
x
21.0
m
ax
0.4
1.6
132
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
Pin 1 – Base
TO–247
Pad 2 – Collector Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
Pin 1 – Base
SOT93
Pad 2 – Collector Pad 3 – Emitter
Parameter Test Conditions Min. Typ. Max. Unit
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
V
BE(on)
f
t
C
ob
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
Transition Frequency
Output Capacitance
Prelim. 3/95
LAB
SEME
BUL50A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
500
1000
10
10
100
100
10
100
15 50
10 20
512
410
0.05 0.1
0.2 0.4
0.3 1.2
0.9 1.1
1.0 1.3
0.8 1.0
20
45
V
m
A
m
A
m
A
—
V
V
V
MHz
pF
IC= 100mA
IC= 1mA
IE= 1mA
VCB= 1000V
TC = 125°C
IB= 0 VCE= 500V
VEB= 5V
IC= 0 TC = 125°C
IC= 0.5A VCE= 4V
IC= 5A VCE= 4V
IC= 10A VCE= 4V
TC = 125°C
IC= 0.5A IB= 0.1A
IC= 5A IB= 1A
IC= 10A IB= 2A
IC= 5A IB= 1A
IC= 10A IB= 2A
IC= 3A VCE= 4V
IC= 0.2A VCE= 4V
VCB= 20V f = 1MHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp= 300ms , d< 2%
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
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